Results 181 to 190 of about 53,337 (264)

Conformal Thermoreversible Gelatin‐Based Gel for High‐Fidelity Electrophysiological Recording and Acute Peripheral Nerve Interfacing

open access: yesAdvanced Materials, EarlyView.
A thermoreversible gelatin‐based gel forms a soft, conformal bioelectronic interface on complex biological surfaces. The flowable precursor penetrates hair‐dense regions, solidifies in situ, and maintains low impedance through adaptive contact and hydration retention.
Ruinan Hao   +9 more
wiley   +1 more source

Tunable Pyroresistive Behavior in Conductive Polymer Composites with a Secondary Elastomer Phase. [PDF]

open access: yesACS Appl Eng Mater
Das B   +8 more
europepmc   +1 more source

Directing Near‐Perfect (001) Orientation in Wafer‐Scale BiOI Thin Films via Halide‐Mediated van der Waals Stacking

open access: yesAdvanced Materials, EarlyView.
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur   +10 more
wiley   +1 more source

All‐Amyloid Functional Coacervates

open access: yesAdvanced Materials, EarlyView.
This study introduces an all‐amyloid interfacial complex coacervate technique that employs charge‐mediated or functionalization‐assisted complexation of oppositely charged food protein‐derived amyloid nanofibrils to engineer functional soft constructs across multiple length scales.
Seyyed Alireza Hashemi   +4 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

open access: yesAdvanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo   +5 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

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