Results 211 to 220 of about 701,668 (295)

Theory for sequence selection via phase separation and oligomerization. [PDF]

open access: yesProc Natl Acad Sci U S A
Haugerud IS   +3 more
europepmc   +1 more source

Molecularly Engineered Highly Stable Memristors with Ultra‐Low Operational Voltage: Integrating Synthetic DNA with Quasi‐2D Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
Molecularly engineered memristors integrating Ag nanoparticle–embedded synthetic DNA with quasi‐2D halide perovskites enable ultra‐low‐operational voltage, forming‐free resistive switching, and record‐low power density. This synergistic integration of customized DNA and 2D OHP in bio‐hybrid architecture enhances charge transport, reduces variability ...
Kavya S. Keremane   +9 more
wiley   +1 more source

Interfacial and Crystallographic Regulation of Zinc Anode via Electric Double Layer Reconstruction for Highly Stable Zn Anode

open access: yesAdvanced Functional Materials, EarlyView.
Trace amounts of perfluoro‐1‐butanesulfonyl fluoride enables the regulation of the Zn/electrolyte interface by the generated zincophilic ─SO3H groups with long hydrophobic ─CF2 tails, which adsorb strongly onto the Zn surface, displace water molecules from the inner Helmholtz plane, and reconstruct the electrical double‐layer structure.
Dinesh Patel   +3 more
wiley   +1 more source

Complexation‐Mediated Diffusion‐Limited Crystal Growth: A General Framework for Anisotropic Crystal Growth in Cu‐Based Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee   +5 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

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