Results 141 to 150 of about 12,572 (263)

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n‐Doped Organic Semiconductors

open access: yesAdvanced Electronic Materials, EarlyView.
A novel n‐dopant, phosphazenium tetrafluoroborate (P2BF4), is introduced for efficient n‐doping in N2200, P(PzDPP‐CT2) and other organic semiconductors (OSCs). P2BF4‐doped OSC films exhibit exceptional thermal stability, maintaining electrical conductivity after heating at > 150 °C for 24 h. This stability allows organic thermoelectric devices based on
Huan Wei   +11 more
wiley   +1 more source

Bandgap‐Dependent Doping of Semiconducting Carbon Nanotube Networks by Proton‐Coupled Electron Transfer for Stable Thermoelectrics

open access: yesAdvanced Electronic Materials, EarlyView.
Proton‐coupled electron transfer doping with benzoquinone is applied to p‐dope dense films of semiconducting single‐walled carbon nanotubes. The doping efficiency depends on the pH of the doping solution and the bandgap of the nanotubes. The highest conductivities and power factors are achieved for small‐bandgap nanotubes, remaining stable for over 120
Angus Hawkey   +5 more
wiley   +1 more source

Thermoelectric Properties of a Family of Benzodifuranone‐Based Conjugated Copolymers in Oriented Thin Films Doped Sequentially With NDMBI‐H

open access: yesAdvanced Electronic Materials, EarlyView.
Combining high polymer orientation of n‐type copolymers by temperature rubbing and sequential doping with N‐DMBI results in a strong improvement of electrical conductivity and thermoelectric power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
Shubhradip Guchait   +7 more
wiley   +1 more source

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang   +8 more
wiley   +1 more source

Synergistically Optimizing the Thermoelectric Performance of n-Type SnS through an Integrated Systematic Approach. [PDF]

open access: yesACS Appl Mater Interfaces
Duraisamy S   +7 more
europepmc   +1 more source

Understanding the Interplay Between Thermal Activation, Diffusion, and Phase Segregation of Molecular Dopants Blended with Polymeric Semiconductors

open access: yesAdvanced Electronic Materials, EarlyView.
The use of air stable but thermally labile molecules provides an efficient strategy for the N‐type doping of organic semiconductors with relatively low electron affinities. Design criteria for efficient dopants should also take into account diffusion and phase segregation that cannot be decoupled from thermally activated doping.
Francesca Pallini   +15 more
wiley   +1 more source

Interplay of Backbone Conformation, Morphology and Thermoelectric Properties of Benzodifuranone‐Isatin Acceptor Polymers

open access: yesAdvanced Electronic Materials, EarlyView.
Modification of polymer backbone via halogenation and comonomer selection leads to conjugated backbones of different stereoelectronic properties, thin film morphologies, and electrical characteristics. The interplay of conformational isomerism, coplanarity, backbone curvature, backbone orientation, and ordering in thin films, electrical conductivity ...
Diego R. Hinojosa   +11 more
wiley   +1 more source

Effect of Regiochemistry on Doping and Thermoelectric Properties of n‐Doped Fullerene Derivatives

open access: yesAdvanced Electronic Materials, EarlyView.
Three fullerene derivatives doubly substituted with diethylene glycol chains (PDEG‐2) is presented. The different regiochemistry significantly affects the crystallinity and consequently the dielectric properties, electronic transport, and doping efficiency. By striking a balance between compatibility with the molecular dopant N‐DMBI and crystallinity a
Federico Ferrari   +7 more
wiley   +1 more source

Epitaxial Growth of p‐Type β‐Ga2O3 Thin Films and Demonstration of a p–n Diode

open access: yesAdvanced Electronic Materials, EarlyView.
This study demonstrates p‐type conductivity in β‐Ga2O3 via Te–Mg co‐doping using MOCVD. The films show tunable hole concentrations up to 1.78×1017 cm−3, and a fabricated p–n diode exhibits rectifying behavior. Density functional theory reveals that Te introduces an intermediate band, lowering the Mg acceptor ionization energy and enabling p‐type ...
Chuang Zhang   +2 more
wiley   +1 more source

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