Results 211 to 220 of about 20,861 (259)
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Thermoelectric figure of merit of boron phosphide
Applied Physics Letters, 1985The thermoelectric power, thermal and electrical conductivity of boron phosphide grown by chemical vapor deposition of hydrogenated compounds were measured in the temperature range from room temperature to 1000 °C and the figure of merit of boron phosphide was evaluated. The figure of merit of 8×10−4 deg−1 was obtained at 1000 °C.
Shigemi Yugo +2 more
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Thermoelectric figure of merit of bounded semiconductors
Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96, 2002The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon ...
G.N. Logvinov, V.S. Zakordonets
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Anisotropic thermoelectric figure-of-merit in Mg3Sb2
Materials Today Physics, 2020Abstract In view of the tensor nature of thermoelectric (TE) figure of merit ZT, the lack of experimental data on its anisotropic transport properties, and the recent advances in theoretical modeling, here we calculated the TE properties of n-type and p-type Mg3Sb2 as a function of temperature along major crystallographic axes using a parameter-free ...
F. Meng +5 more
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Thermoelectric figure of merit of a one-dimensional conductor
Physical Review B, 1993We investigate the effect on the thermoelectric figure of merit of preparing materials in the form of one-dimensional conductors or quantum wires. Our calculations show that this approach has the potential to achieve a significant increase in the figure of merit over both the bulk value and the calculated superlattice values.
, Hicks, , Dresselhaus
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Figure of merit for thermoelectrics
Journal of Applied Physics, 1989Theoretical calculations are presented for the figure of merit Z in thermoelectrics. The maximum values of Z are obtained in semiconductors which are doped so that the chemical potential is near the band edge. The highest Z is related to the B parameter of Chasmar and Stratton [J. Electron. Control 7, 52 (1959)].
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Strained endotaxial nanostructures with high thermoelectric figure of merit
Nature Chemistry, 2011Thermoelectric materials can directly generate electrical power from waste heat but the challenge is in designing efficient, stable and inexpensive systems. Nanostructuring in bulk materials dramatically reduces the thermal conductivity but simultaneously increases the charge carrier scattering, which has a detrimental effect on the carrier mobility ...
Kanishka, Biswas +6 more
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The Figure of Merit in Amorphous Thermoelectrics
physica status solidi (a), 2002In some semiconductors, the mean free path can be greater for the phonons than for the charge carriers. When this is the case it is likely that the material will display a higher thermoelectric figure of merit in the amorphous rather than the crystalline form.
G.S. Nolas, H.J. Goldsmid
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Enhanced thermoelectric figure of merit in thin GaAs nanowires
Nanoscale, 2015Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and
Xiaolong, Zou +4 more
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Generalized theory of thermoelectric figure of merit
Journal of Applied Physics, 2008The fundamental equations of thermoelectricity are reviewed in a more general and rigorous context and the efficiency quotient of the thermoelements is derived, with emphasis on the relevance of the figure of merit parameter. The Joule–Lenz, thermoelectric and thermoconducted heat are identified, and the ideal situation of a perfectly homogeneous ...
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Maximum figure of merit of thermoelectric materials
Advanced Energy Conversion, 1961Abstract An estimate of the maximum figure of merit at optimum carrier concentration of a thermoelectric material is shown to be obtainable from the measured values of the Seebeck coefficient, the electrical conductivity, and the thermal conductivity for any extrinsic specimen of the material that is not too greatly overdoped.
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