Results 181 to 190 of about 14,438 (269)

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

open access: yesAdvanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang   +6 more
wiley   +1 more source

Elucidating the role of stacking faults in TlGaSe<sub>2</sub> on its thermoelectric properties. [PDF]

open access: yesNPJ 2D Mater Appl
Simonian T   +7 more
europepmc   +1 more source

Coexistence of Large Nernst Effect and Axis‐Dependent Conduction Polarity in Semimetal MoSi2

open access: yesAdvanced Electronic Materials, EarlyView.
MoSi2${\rm MoSi}_2$ is a rare material in which axis‐dependent conduction polarity (ADCP) and a large ordinary Nernst effect (ONE) coexist. The pronounced ONE (199μVK−1$199\,\umu \mathrm {V}\,\mathrm {K}^{-1}$) originates from nearly perfect carrier compensation, high mobility, and likely phonon drag, while ADCP arises from mixed‐dimensionality of the ...
Orest Pavlosiuk, Maciej J. Winiarski
wiley   +1 more source

Facile One‐Pot Solvothermal Synthesis of Bi2Te3 Nanoplate/Te Nanorod Composites with High Seebeck Coefficients for Flexible Film‐Based Thermoelectric Generators

open access: yesAdvanced Electronic Materials, EarlyView.
A one‐pot solvothermal reaction yields Bi2Te3 nanoplate/Te nanorod composites, in which the antimony precursor regulates crystallite size without lattice incorporation. Drop‐cast flexible films reach Seebeck coefficients of −127 and 323 µV K−1 at 393 K, and a flexible thermoelectric generator produces 6.2 mV at a temperature difference of 5.6 K ...
Keisuke Kaneko   +6 more
wiley   +1 more source

Enhanced Thermoelectric Performance of GeTe‐Sb2Te3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization

open access: yesAdvanced Electronic Materials, EarlyView.
A GeTe‐Sb2Te3 composition spread is fabricated using RF magnetron co‐sputtering. Increasing Sb content stabilized the high‐performance cubic GeTe phase. The composition 5Sb3₇Te5₈ exhibited the highest thermoelectric performance, achieving a power factor of ∼1 mW m−1 K−2 and a maximum zT of 0.81 at 300°C.
Nur Qalishah Adanan   +9 more
wiley   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss   +21 more
wiley   +1 more source

Home - About - Disclaimer - Privacy