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Thermoelectric properties of Ag3AuTe2
Journal of Applied Physics, 2000Electronic structure calculations predict Ag3AuTe2 to be a small-band-gap semiconductor. Polycrystalline samples of the pure and doped materials have been synthesized, and the physical properties are reported. Thermoelectric power measurements indicate that pure Ag3AuTe2 is a p-type material with a very large room-temperature Seebeck coefficient of 530
Peter G. Khalifah+4 more
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Fabrication and Thermoelectric Properties of Single-Crystal Argyrodite Ag8SnSe6
Chemistry of Materials, 2019Recently, polycrystalline argyrodite Ag8SnSe6 has shown promising thermoelectric performance, which largely relies on the ultralow lattice thermal conductivity.
Min Jin+7 more
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Thermoelectric Properties of Ag2Te
Journal of Applied Physics, 1961The Seebeck coefficient α, electrical conductivity σ, and thermal conductivity K data are given for a number of Ag2Te specimens measured at room temperature. The maximum value observed for the figure of merit α2σ/K was 1.3×10−3°C−1. The relationship between K and σ was linear, and Kel could be expressed approximately by (π2/3) (k/e)2σT.
C. Wood, P. F. Taylor
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Thermoelectric and Thermal Properties [PDF]
In the presence of a temperature gradient VT, the distribution of carrier velocities varies across a semiconductor. Consequently, even in the absence of an electric field, a macroscopic carrier flux is produced because the temperature gradient acts as an effective temperature field, which has some of the effects of the electric field. If the circuit is
Yu. I. Ravich+2 more
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Thermoelectric properties of In-PbTe
2011 IEEE Nanotechnology Materials and Devices Conference, 2011Thermoelectric(TE) conversion devices can directly convert heat to electricity. Lead Telluride are known for fabulous thermoelectric material in 600∼900K temperature range. It is suggested that power factor of this material can be enhanced by incorporating group III dopants through a distortion of the electron density of state i.e., the resonant level.
Junpil Hwang+2 more
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Chemistry of Materials, 2018
Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. Most well-developed strategies aimed at enhancing thermoelectric performance are based on isotropic bulk materials.
Cheng Chang+4 more
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Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. Most well-developed strategies aimed at enhancing thermoelectric performance are based on isotropic bulk materials.
Cheng Chang+4 more
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Thermoelectric properties of NaCo2O4
Journal of Alloys and Compounds, 2001Abstract The thermoelectric properties such as the thermal conductivity, electrical resistivity and Seebeck coefficient of NaCo 2 O 4 and NaCo 1.9 M 0.1 O 4 (M=Ti, Rh, Pd) were evaluated in the temperature range from room temperature to 723 K. Polycrystalline samples were prepared by sintering in air followed by hot pressing.
Shinsuke Yamanaka+3 more
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Thermoelectric properties of AgCrSe2
AIP Conference Proceedings, 2012Temperature dependence of thermoelectric properties of AgCrSe2 has been studied from 300 K to 900 K. The thermopower (S) decreases initially and then increases with increasing temperature. The positive sign of S indicates that the compound is p-type thermoelectric material.
Ranu Bhatt+6 more
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, 2018
Chemical doping is widely used to manipulate the electrical and thermoelectric properties of organic semiconductors, yet intelligent design of polymer–dopant systems remains elusive.
Zhimin Liang+11 more
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Chemical doping is widely used to manipulate the electrical and thermoelectric properties of organic semiconductors, yet intelligent design of polymer–dopant systems remains elusive.
Zhimin Liang+11 more
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Thermoelectric properties of EuSe
AIP Conference Proceedings, 1976The thermoelectric power and the electrical conductivity of the semiconducting magnetic EuSe has been measured in the temperature range 7–300 K and in external magnetic fields between 0–13 kG in order to study the reasons for the conductivity minimum and the strong negative magnetoresistance found near the magnetic ordering temperature.
T. Shiosaki, J. Heleskivi
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