Results 31 to 40 of about 100,490 (349)

Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot

open access: yes, 2015
Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating.
Burke, Adam M.   +4 more
core   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Thickness-dependent thermoelectric power factor of polymer-functionalized semiconducting carbon nanotube thin films

open access: yesScience and Technology of Advanced Materials, 2018
The effects of polymer structures on the thermoelectric properties of polymer-wrapped semiconducting carbon nanotubes have yet to be clarified for elucidating intrinsic transport properties.
Yoshiyuki Nonoguchi   +4 more
doaj   +1 more source

Realizing high thermoelectric performance for p-type SiGe in medium temperature region via TaC compositing

open access: yesJournal of Materiomics, 2023
SiGe is recognised as an excellent thermoelectric material with superior mechanical properties and thermal stability in regions with high temperatures. This study explores a novel strategy for co-regulating thermoelectric transport parameters to achieve ...
Zheng Fan   +8 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

NANOSTRUCTURING AS A WAY FOR THERMOELECTRIC EFFICIENCY IMPROVEMENT [PDF]

open access: yesНаучно-технический вестник информационных технологий, механики и оптики, 2014
The urgency of thermoelectric energy conversion is proved. Perspectives of nanostructures usage as thermoelectric materials are shown. The authors have systematized and generalized the methods and investigation results of bulk nanostructure ...
L. V. Bochkov, I. A. Nefedova, R. Ahiska
doaj  

Effects of Y, GdCu, and Al Addition on the Thermoelectric Behavior of CoCrFeNi High Entropy Alloys

open access: yesMetals, 2018
Thermoelectric (TE) materials can interconvert waste heat into electricity, which will become alternative energy sources in the future. The high-entropy alloys (HEAs) as a new class of materials are well-known for some excellent properties, such as high ...
Wanqing Dong   +6 more
doaj   +1 more source

The Effect of Na Atom on TlInSe2 and TlInTe2 Compounds

open access: yesSüleyman Demirel Üniversitesi Fen-Edebiyat Fakültesi Fen Dergisi, 2023
Thermoelectric materials have widely used applications in technological areas such as electronic devices and data storage. TlInSe2 and TlInTe2 compounds are among these thermoelectric materials.
İsmail Yücel
doaj   +1 more source

Enhancing high-temperature thermoelectric properties of PtAs2 by Rh doping

open access: yes, 2013
The effects of Rh doping on the thermoelectric properties of Pt1-xRhxAs2 (x = 0, 0.005, and 0.01) with pyrite structure were studied by conducting measurements of electrical resistivity rho, Seebeck coefficient S, and thermal conductivity kappa.
Kudo, Kazutaka   +4 more
core   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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