Results 291 to 300 of about 159,468 (366)

Superlattice Engineering on 2D Bi2Te3‐Sb2Te3 Chalcogenides

Advanced Science, EarlyView.
This study presents an innovative approach to fabricating 2D Bi2Te3‐Sb2Te3 chalcogenide superlattices in wrapped, lateral, and vertical configurations. Utilizing a novel precursor switching method, chemical vapor deposition, and post‐growth techniques, the research achieves controlled superlattices with sharp interfaces.
Han Wang, Songqing Zhang, Huijia Luo, Wenwu Pan, Zekai Zhang, Junliang Liu, Yongling Ren, Cailei Yuan, Wen Lei   +8 more
wiley   +1 more source

Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te. [PDF]

Nat Commun
An D, Zhang S, Zhai X, Yang W, Wu R, Zhang H, Fan W, Wang W, Chen S, Cojocaru-Mirédin O, Zhang XM, Wuttig M, Yu Y.   +12 more
europepmc   +1 more source

REFERENCE ZIRCONIUM HYDRIDE REACTOR THERMOELECTRIC SYSTEM.

, 1969

openalex   +2 more sources

Bimetallic Plasmonic Nanozyme‐Based Microneedle for Synergistic Ferroptosis Therapy of Melanoma

Advanced Science, EarlyView.
A microneedle (MN) patch that integrates novel bimetallic plasmonic nanozyme (BPNzyme) and traditional Chinese medicine β‐elemene (β‐ELE) has been rationally designed for ferroptosis pathway‐dependent combined therapy of melanoma. Abstract Melanoma is the most common malignant skin tumor, characterized by complexity, invasiveness, and heterogeneity ...
Wei Duan, Keying Xu, Yue Gao, Sheng Huang, Xueqian Xia, Xiang Liu, Shuangxue Pan, Chunpeng Jiao, Weijian Cheng, Yong Guo, Jingwen Zhao, Jia‐Wei Shen   +11 more
wiley   +1 more source

Future Trends in Alternative Sustainable Materials for Low-Temperature Thermoelectric Applications. [PDF]

ACS Appl Electron Mater
Toral V, Gómez-Gijón S, Romero FJ, Morales DP, Castillo E, Rodríguez N, Rojas S, Molina-Lopez F, Rivadeneyra A.   +8 more
europepmc   +1 more source

Delocalized Charge Transport in Thermoelectric Composites of Semiconducting Carbon Nanotubes Wrapped with a P‐Type Polymer

Advanced Electronic Materials, EarlyView.
Composites made of semiconducting carbon nanotubes and p‐type polymers, when adequately doped with molecular dopants, can exhibit highly delocalized charge carrier transport, showing high thermoelectric performances. The efficient charge delocalization is enabled by the reduced coulombic binding energy at high carrier concentration and the small ...
Ye Liu, Wenchao Yang, Anirudh Sharma, Diego Rosas‐Villalva, Han Xu, Md Azimul Haque, Frédéric Laquai, Derya Baran   +7 more
wiley   +1 more source

Green synthesis of Cu₂S using garlic-derived sulfur: structural, morphological, optical, electrical, and photoresponse characterization with potential for thermoelectric applications. [PDF]

RSC Adv
Shahidi MM, Akbari M, Mehrabani M, Khameneh AS, Welegergs GG, Aligholami M, Maaza M.   +6 more
europepmc   +1 more source

Evolution of Dissipative Regimes in Atomically Thin Bi2Sr2CaCu2O8 + x Superconductor

Advanced Electronic Materials, Volume 11, Issue 4, April 2025.
The combination of cryogenic exfoliation methods with a new generation of thermoelectric chips based on silicon nitride microprinted circuit boards gives access to the vortex‐dissipation regime in atomically thin Bi2Sr2CaCu2O8 + x superconductor. The investigation of the Nernst signal in nanostructured samples demonstrates that finite‐size effects play
Sanaz Shokri, Michele Ceccardi, Tommaso Confalone, Christian N. Saggau, Yejin Lee, Mickey Martini, Genda Gu, Valerii M. Vinokur, Ilaria Pallecchi, Kornelius Nielsch, Federico Caglieris, Nicola Poccia   +11 more
wiley   +1 more source

First-principles investigation of thermoelectric performance in KMnZ (Z = Sn, Pb) half-Heusler alloys. [PDF]

RSC Adv
Gurunani B, Gupta DC.
europepmc   +1 more source

Enhancing Device Performance with High Electron Mobility GeSn Materials

Advanced Electronic Materials, Volume 11, Issue 5, April 2025.
Vertical gate‐all‐around nanowire n‐FETs based on GeSn‐alloys with Sn‐contents of 8% and 11% are presented. A great improvement in Ion, gm, and SS is found with increased Sn‐content. A fivefold increase in on‐current is observed for 11%‐GeSn compared to Ge, underlining the potential of GeSn for nanoelectronics applications.
Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao   +10 more
wiley   +1 more source