Results 41 to 50 of about 87,344 (168)

Comment on "Optical Imaging of Light-Induced Thermopower in Semiconductor" [Phys. Rev. Applied 5, 024005 (2016)] [PDF]

open access: yesPhys. Rev. Applied 9, 038001 (2018), 2018
In a recent article [Phys. Rev. Applied 5, 024005 (2016)], Gibelli and coworkers proposed a method to determine the thermopower, i.e. the Seebeck coefficient, using photoluminescence measurements. The photoluminescence spectra are used to obtain the local gradients of both the electrochemical potential difference between electron and holes and the ...
arxiv   +1 more source

Low Thermal Conductivity in Single Crystalline Mg3Bi2 and Its Thermopower Enhanced by Electron‐Phonon Interaction

open access: yesAdvanced Science, EarlyView.
In this work, low lattice thermal conductivity and high carrier mobility are revealed in single crystalline Mg3Bi2, a promising thermoelectric material. An increase of thermopower as a “hump” ≈20 K is found, where phonon drag effect contributes large portion by replacing diffusive electrons.
Qiang Feng   +3 more
wiley   +1 more source

Potential energy contribution to the thermopower of correlated electrons [PDF]

open access: yesarXiv, 2020
Certain classes of strongly correlated systems promise high thermopower efficiency, but a full understanding of correlation effects on the Seebeck coefficient is lacking. This is partly due to limitations of Boltzmann-type approaches. One needs a formula for the thermopower that allows separate investigations of the kinetic and potential energy ...
arxiv  

Thermopower of a single electron transistor in the regime of strong inelastic cotunneling [PDF]

open access: yes, 2002
We study Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E_C the transport of electrons is dominated by strong inelastic cotunneling.
arxiv   +1 more source

Direction‐Dependent Conduction Polarity in Altermagnetic CrSb

open access: yesAdvanced Science, EarlyView.
A recently identified altermagnetic candidate, CrSb, has been found to exhibit direction‐dependent conduction polarity (DDCP). Conduction is dominated by electrons in the ab$\textit{ab}$‐plane and by holes along the c$c$‐axis of the hexagonal unit cell of CrSb.
Banik Rai   +7 more
wiley   +1 more source

Entropy, frustration and large thermopower of doped Mott insulators on the fcc lattice [PDF]

open access: yesPhys. Rev. B 87 035126 (2013), 2012
Electronic frustration and strong correlations may lead to large Seebeck coefficients. To understand this physics on general grounds, we compute the thermopower of the one-band Hubbard model on the 3-dimensional fcc lattice over the whole range of fillings for intermediate and large interaction strength.
arxiv   +1 more source

Thermopower Enhancement of Rutile-type SnO2 Nanocrystalline Using Facile Co-Precipitation Method

open access: yesJurnal Elektronika dan Telekomunikasi, 2020
Metal oxide semiconductor has attracted so much attention due to its high carrier mobility. Herein, thermoelectric study of nanocrystalline SnO2 through a simple co-precipitation method is conducted to enhance the Seebeck coefficient (S).
Nadya Larasati Kartika   +7 more
doaj   +1 more source

Oxygen Vacancy Defect Engineering for Transverse Thermoelectric Enhancement: a Novel Extrinsic Pathway beyond Intrinsic Approaches

open access: yesAdvanced Science, EarlyView.
Transverse thermoelectric (TE) technology gains increasing attention as it enables efficient power generation within a single TE element and eliminates junctions. This study enhances transverse thermopower in polycrystalline Sr3YCo4O10‐δ through oxygen vacancy defect engineering, utilizing the anomalous Nernst effect to improve TE efficiency.
Min Young Kim   +7 more
wiley   +1 more source

Variable‐Range Hopping Conduction in Amorphous, Non‐Stoichiometric Gallium Oxide

open access: yesAdvanced Electronic Materials, Volume 11, Issue 4, April 2025.
The combination of experimental evidence, ab‐initio DOS calculations and quantitative modeling by kinetic Monte Carlo simulations reveals: Variable‐range hopping (VRH) is the dominant electron conduction mechanism in a‐GaOx (x = 0.8 to 1.0), even at room temperature, which leads to a new, fundamental understanding of a‐GaOx‐based electronic devices ...
Philipp Hein   +7 more
wiley   +1 more source

Berry curvature induced thermopower in type-I and type-II Weyl Semimetals [PDF]

open access: yesPhys. Rev. B 100, 085406 (2019), 2019
Berry curvature acts analogous to a magnetic field in the momentum-space, and it modifies the flow of charge carriers and entropy. This induces several intriguing magnetoelectric and magnetothermal transport phenomena in Weyl semimetals. %, including the planar Hall and planar Nernst effect.
arxiv   +1 more source

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