Results 141 to 150 of about 178,579 (206)
A Scalable Method for Cavity-Enhanced Solid-State Quantum Sensors. [PDF]
Tibben DJ +5 more
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High output power low temperature polysilicon thin-film transistor boost converters for large-area sensor and actuator applications. [PDF]
Velazquez Lopez M +4 more
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Customized batch fabrication of highly sensitive thin capacitive soft sensors based on high dielectric constant composite polymers. [PDF]
Ghanbari A +6 more
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Trace level detection of NH<sub>3</sub> at room temperature using Cd-ZnFe<sub>2</sub>O<sub>4</sub> thin films. [PDF]
Thangavel R +10 more
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Thin film trichloroethylene electrochemical sensor
Biosensors and Bioelectronics, 2004Pt-Ti and Pb-Pt-Ti thin films were deposited on alumina substrates by sputtering in Ar gas. In this study, an electrodeposited Pb-modified Pt-Ti thin film working electrode was prepared. Optimal sensing conditions were found to be -2.10 V (versus Ag/Ag+ with 0.1 M tetrabutylammonium perchlorate (TBAP) in acetonitrile (AN) solution) sensing potential ...
Min-Hua, Chen +2 more
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Thin film retinomorphic sensors
Organic and Hybrid Field-Effect Transistors XX, 2021While there have been many impressive demonstrations of neuromorphic computation in recent years, input stimuli provided to this hardware generally still take a form designed for von Neumann processors. For example, in a CCD detector an array of pixels is sampled at fixed intervals in time.
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Materials Letters, 1998
Abstract The electrical and gas sensing properties of chemically deposited zinc oxide (ZnO) films were investigated. Two activation energy values, 0.3 eV and 0.8–0.9 eV, were determined in the temperature range 300–400 K which are attributed to oxygen vacancy (VO) donor and heat of chemisorption of the O2− species.
P. Mitra, A.P. Chatterjee, H.S. Maiti
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Abstract The electrical and gas sensing properties of chemically deposited zinc oxide (ZnO) films were investigated. Two activation energy values, 0.3 eV and 0.8–0.9 eV, were determined in the temperature range 300–400 K which are attributed to oxygen vacancy (VO) donor and heat of chemisorption of the O2− species.
P. Mitra, A.P. Chatterjee, H.S. Maiti
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