Results 161 to 170 of about 126,361 (205)
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Thin film solar cell materials
Applied Surface Science, 1993Photovoltaic energy conversion is based upon the generation of charge carriers by absorption of light and on their local separation in semiconductor junctions. The necessary thickness of the absorbing layer has to correspond with the lengths across which photogenerated carriers are collected.
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IEEE Transactions on Electron Devices, 1967
Thin-film solar cells utilizing polycrystalline gallium-arsenide films have been made and investigated to determine their suitability for future solar-power systems. The gallium-arsenide films are vapor deposited onto substrates of molybdenum or aluminum foil.
P. Vohl +5 more
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Thin-film solar cells utilizing polycrystalline gallium-arsenide films have been made and investigated to determine their suitability for future solar-power systems. The gallium-arsenide films are vapor deposited onto substrates of molybdenum or aluminum foil.
P. Vohl +5 more
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Journal of Crystal Growth, 1985
Abstract This paper reviews some of the most promising CdTe-based solar cells, with efficiencies in excess of 10%, prepared by various film deposition methods including close-spaced vapor transport, close-spaced sublimation, hot-wall vacuum evaporation, electrodeposition and screen-printing.
C. Cohen-Solal +3 more
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Abstract This paper reviews some of the most promising CdTe-based solar cells, with efficiencies in excess of 10%, prepared by various film deposition methods including close-spaced vapor transport, close-spaced sublimation, hot-wall vacuum evaporation, electrodeposition and screen-printing.
C. Cohen-Solal +3 more
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1987
Thin-film solar cell technology has settled on three semiconductors: CdTe, CuInSe2 and a-Si:H. Cells with these materials have reached efficiencies above 10%. The commercial adoption of these materials signifies their readiness for near-term applications. Efficiency will remain the technology driver for large-scale, utility applications.
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Thin-film solar cell technology has settled on three semiconductors: CdTe, CuInSe2 and a-Si:H. Cells with these materials have reached efficiencies above 10%. The commercial adoption of these materials signifies their readiness for near-term applications. Efficiency will remain the technology driver for large-scale, utility applications.
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Amorphous thin-film solar cells
Applied Physics A Solids and Surfaces, 1991This report gives an overview of the present status of thin-film solar cells made from hydrogenated amorphous semiconductors (a-Si:H, a-Ge:H) together with new results emphasizing the physics of amorphous materials and devices. Preparation techniques, quality and performances of a-Si:H and a-Ge:H films as well as solar cells with pin structures are ...
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Thin film heterojunction solar cells
Materials Chemistry, 1979Abstract After an introduction about the parameters which are important in the fabrication of thin film heterojunction solar cells, some methods of in vacuum deposition of thin films are discussed. A multi source evaporation method which was developed in our laboratory and which allowed us to obtain low resistivity films of CdS, CdZnS and CdTe, is ...
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Cu2ZnSnS4 thin film solar cells
Thin Solid Films, 2005Abstract Aiming to develop the solar cells free from the environmental contaminants, promising solar cell of a thin film type could be produced by using Cu 2 ZnSnS 4 (CZTS) film as the absorber. The CZTS film possesses promising characteristic optical properties; band gap energy of about 1.5 eV and large absorption coefficient in the order of 10 4 ...
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1998
The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface.
Metselaar, J.W. (author) +1 more
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The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface.
Metselaar, J.W. (author) +1 more
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1982
Thin polycrystalline films of Zn3P2 were deposited on metallized mica substrates by close-spaced vapor transport. Mg-Zn3P2 Schottky barrier solar cells were prepared by depositing a thin semi-transparent film of Mg by d.c. sputtering. Comparison of thin-film cells with those made on single crystal Zn3P2 showed that the presence of grain-boundaries had ...
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Thin polycrystalline films of Zn3P2 were deposited on metallized mica substrates by close-spaced vapor transport. Mg-Zn3P2 Schottky barrier solar cells were prepared by depositing a thin semi-transparent film of Mg by d.c. sputtering. Comparison of thin-film cells with those made on single crystal Zn3P2 showed that the presence of grain-boundaries had ...
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