Results 31 to 40 of about 87,352 (336)

Performance Investigation of Single Grain Boundary Junctionless Field Effect Transistor

IEEE Journal of the Electron Devices Society, 2016
In this paper, we report a single grain boundary (GB) junctionless thin film transistor (JLFET) on recrystallized polycrystalline silicon (poly-Si JLFET).
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source

High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors

Communications Materials, 2023
Solution-processable organic thin-film transistors are needed for device applications. Here, solution-processed organic semiconductors and amorphous metal oxide semiconductors are integrated into a transistor, with five-stage complementary ring ...
Xiaozhu Wei, Shohei Kumagai, Tatsuyuki Makita, Kotaro Tsuzuku, Akifumi Yamamura, Mari Sasaki, Shun Watanabe, Jun Takeya   +7 more
doaj   +1 more source

Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2019
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and ...
Yu-Ru Lin, Yu-Hsien Lin, Yi-Yun Yang, Yung-Chun Wu   +3 more
doaj   +1 more source

Biotin-Functionalized Semiconducting Polymer in an Organic Field Effect Transistor and Application as a Biosensor

Sensors, 2012
This report presents biotin-functionalized semiconducting polymers that are based on fluorene and bithiophene co-polymers (F8T2). Also presented is the application of these polymers to an organic thin film transistor used as a biosensor.
Yong Suk Yang, Do-Hoon Hwang, Seong Hyun Kim, Sang Chul Lim, Zin-Sig Kim   +4 more
doaj   +1 more source

Synthesis and characterization of copper, polyimide and TIPS-pentacene layers for the development of a solution processed fibrous transistor [PDF]

, 2011
A study was performed for the development of a flexible organic field effect transistor starting from a polyester fibre as substrate material. Focus of subsequent layer deposition was on low temperature soluble processes to allow upscaling.
Bruneel, Els, Rambausek, Lina, Schwarz, Anne, Van Driessche, Isabel, Van Genabet, Bram, Van Langenhove, Lieva   +5 more
core   +3 more sources

Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

IEEE Journal of the Electron Devices Society, 2015
A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source

Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors [PDF]

, 2019
An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved ...
Kim, Hae-Jin, Rao, Zhoulyu, Shim, Hyunseok, Sim, Kyoseung, Thukral, Anish, Yu, Cunjiang   +5 more
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

IEEE Journal of the Electron Devices Society, 2017
A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was
Yuxing Li, Renrong Liang, Jiabin Wang, Ying Zhang, He Tian, Houfang Liu, Songlin Li, Weiquan Mao, Yu Pang, Yutao Li, Yi Yang, Tian-Ling Ren   +11 more
doaj   +1 more source

Conjoint use of Naphthalene Diimide and Fullerene Derivatives to Generate Organic Semiconductors for n–type Organic Thin Film Transistors

ChemistryOpen, 2021
In this paper, we described the design, synthesis, and characterization of two novel naphthalene diimide (NDI) core‐based targets modified with terminal fullerene (C60) yield – so called S4 and S5, in which NDI bearing 1 and 2 molecules of C60 ...
Shailesh S. Birajdar, Samantha Brixi, Dr. Pedada Srinivasa Rao, Dr. Rajesh S. Bhosale, Dr. Mohammad Al Kobaisi, Dr. Akhil Gupta, Prof. Benoît H. Lessard, Dr. Sidhanath V. Bhosale, Prof. Sheshanath V. Bhosale   +8 more
doaj   +1 more source