Results 271 to 280 of about 386,415 (303)
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Solid-State Electronics, 2008
Abstract We use a two-band k · p Hamiltonian to describe the subband structure in strained silicon thin films. The model describes the dependence of the transversal effective mass on strain and film thickness. However, it is found that the two-band k · p model is unable to describe recently observed large valley splitting.
Viktor Sverdlov, Siegfried Selberherr
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Abstract We use a two-band k · p Hamiltonian to describe the subband structure in strained silicon thin films. The model describes the dependence of the transversal effective mass on strain and film thickness. However, it is found that the two-band k · p model is unable to describe recently observed large valley splitting.
Viktor Sverdlov, Siegfried Selberherr
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Journal of Mathematical Sciences, 2010
We have ascertained the limits of reasonable application of the classical boundary element method for the solution of the antiplane problem of the theory of elasticity in the study of bodies with thin-walled elements of structure and geometry. We have proposed an approach for the regularization of singular and quasisingular integrals, which appear ...
H. T. Sulym, Ia. M. Pasternak
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We have ascertained the limits of reasonable application of the classical boundary element method for the solution of the antiplane problem of the theory of elasticity in the study of bodies with thin-walled elements of structure and geometry. We have proposed an approach for the regularization of singular and quasisingular integrals, which appear ...
H. T. Sulym, Ia. M. Pasternak
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Highly Sensitive Cr-N Thin Film Pressure Sensor using Ceramic Structure Body
IEEJ Transactions on Sensors and Micromachines, 2023Naohiro Minakawa +2 more
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2014 IEEE International Reliability Physics Symposium, 2014
We analyze the soft error tolerance of DFF in 65-nm bulk and SOTB (Silicon on Thin BOX) process by alpha and neutron experiments and device-simulations. The experimental results reveal that by increasing the reverse body bias the soft error rate in the bulk structure is increased, while the number of soft errors in SOTB structure is decreased.
null Kuiyuan Zhang +2 more
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We analyze the soft error tolerance of DFF in 65-nm bulk and SOTB (Silicon on Thin BOX) process by alpha and neutron experiments and device-simulations. The experimental results reveal that by increasing the reverse body bias the soft error rate in the bulk structure is increased, while the number of soft errors in SOTB structure is decreased.
null Kuiyuan Zhang +2 more
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Transition to body-centered cubic structure in Au thin films under electron-beam irradiation
Acta Materialia, 2023Sung Bo Lee, Jinwook Jung, Heung Nam Han
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ELASTIC WARPING IN THIN WALLED STRUCTURES TO IMPROVE TORSIONAL STIFFNESS IN CAR BODY
1999The paper presents a simplified model in order to estimate the stiffness of open thin-walled structures with elastic warping. The analytical solution provided by the Vlasov theory for non symmetrical cases is obtained for concentrated and uniform torque.
B. Atzori, LIVIERI, Paolo, F. Pasetti
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ECS Meeting Abstracts, 2018
Uniaxial compressive strain of p-MOSFETs has significantly improved p-MOS performance since it was introduced into high-volume manufacturing in Intel's 90-nm node. Further increases in compressive strain and the Ge fraction of the Si1-xGex channel at successive technology nodes have led to increased hole mobility (and, therefore, increased hole ...
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Uniaxial compressive strain of p-MOSFETs has significantly improved p-MOS performance since it was introduced into high-volume manufacturing in Intel's 90-nm node. Further increases in compressive strain and the Ge fraction of the Si1-xGex channel at successive technology nodes have led to increased hole mobility (and, therefore, increased hole ...
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Body Contact Structure using Elevated Field Insulator for Ultra-Thin Film SOI-MOSFETs
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, 2003S. Yamagami +11 more
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