Results 171 to 180 of about 4,435,043 (396)

The structure of thin films. Part XI.— Oxygenated derivatives of benzene

, 1928
Neil Kensington Adam
openalex   +1 more source

Early References to Fluorescence and Light transmitted by Thin Gold Films [PDF]

, 1909
John H. Shaxby
openalex   +1 more source

Patterned Assembly of Transition Metal Dichalcogenide/Graphene Heterostructures via Direct Laser Writing

Advanced Functional Materials, EarlyView.
The fabrication of patterned transition metal dichalcogenide (TMD)/graphene heterostructures via direct laser writing reveals new interface chemistry and enables efficient, customizable assembly. Selective laser irradiation of functionalized TMD/graphene triggers localized reactions, forming chemically modified interfaces.
Xin Chen, Stefan Wolff, Sofiia Zuieva, Robert Schusterbauer, Rida Shaikh, Christian E. Halbig, Anton Habel, Roland Gillen, Kathrin C. Knirsch, Ievgen Donskyi, Siegfried Eigler, Janina Maultzsch, Andreas Hirsch   +12 more
wiley   +1 more source

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Advanced Science
Threshold‐switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures ...
Minwoo Choi, Ha‐Jun Sung, Bonwon Koo, Jong‐Bong Park, Wooyoung Yang, Youngjae Kang, Yongyoung Park, Yongnam Ham, Dong‐Jin Yun, Dongho Ahn, Kiyeon Yang, Chang Seung Lee   +11 more
doaj   +1 more source

On the Electrical Resistance of Thin Films

, 1898
Isabelle Stone
openalex   +2 more sources

The spontaneous thinning of liquid films [PDF]

, 1881
Jean Plateau
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Terahertz‐Driven Ultrafast Dynamics of Rare‐Earth Nickelates by Controlling Only the Charge Degree of Freedom

Advanced Functional Materials, EarlyView.
The THz drive of the Mott insulating state of a rare‐earth nickelate induces instantaneous insulator‐metal transition via quantum tunneling of valence electrons across the bandgap. This transition is pure electronic and highly non‐thermal, which may find its applications in ultrafast opto‐electronics with enhanced performance and minimal device size ...
Gulloo Lal Prajapati, Sergey Kovalev, Igor Ilyakov, Atiqa Arshad, Gaurav Dubey, Ketan S. Navale, Dhanvir Singh Rana, Jan‐Christoph Deinert   +7 more
wiley   +1 more source

Polarized Light.-Norremberg Doubler and the Study of Thin Films [PDF]

, 1886
Geo. M. Hopkins
openalex   +1 more source

Enhanced Magnetization Switching Efficiency via Orbital‐Current‐Induced Torque in Ti/Ta (Pt)/CoFeB/MgO Structures

Advanced Functional Materials, EarlyView.
The orbital‐current‐induced torque is investigated as an efficient method for controlling magnetization direction. By introducing Ti as an orbital current source in Ti/Ta (or Pt)/CoFeB/MgO structures, the switching current is reduced by ∼25% compared to a conventional spin‐orbit torque structure of Ta/CoFeB/MgO.
So y. Shin, Donghyeon Han, Soogil Lee, Byong‐Guk Park   +3 more
wiley   +1 more source

Photo-Electric Properties of Thin Films of Alkali Metals

, 1924
Herbert E. Ives
openalex   +1 more source