Results 261 to 270 of about 4,435,043 (396)

Nano-engineered thin-film thermoelectric materials enable practical solid-state refrigeration. [PDF]

open access: yesNat Commun
Ballard J   +9 more
europepmc   +1 more source

Sol processing of conjugated carbon nitride powders for thin-film fabrication.

open access: yesAngewandte Chemie, 2015
Jinshui Zhang   +3 more
semanticscholar   +1 more source

Understanding and Addressing the Performance Asymmetry Issue in Semitransparent Laminated Organic Photovoltaic Devices

open access: yesAdvanced Functional Materials, EarlyView.
This work addresses the challenge of current–voltage asymmetry in scalable laminated semitransparent organic photovoltaics (OPVs) for indoor applications. Vertical stratification of materials is shown to create an energy barrier, leading to performance differences under different illumination directions.
Gulzada Beket   +15 more
wiley   +1 more source

Modeling Thin Films

open access: yes, 2004
Cette thèse est consacrée à la modélisation des films minces courbés du type martensitique, hyperélastiques et ferromagnétiques. L'épaisseur de ces films suivant la direction normale à leur surface moyenne est très petite devant les autres dimensions du film.
openaire   +1 more source

Al1‐xScxN‐Based Ferroelectric Domain‐Wall Memristors

open access: yesAdvanced Functional Materials, EarlyView.
(a) Conductive atomic force microscopy (CAFM) image of the initial state bidomain structure of the Al0.85Sc0.15N (a) showing an enhanced conductivity of the head‐to‐head domain boundary. (b) CAFM image of the same area after application of several −65 V, 1 s voltage pulses showing lower conductivity of the generated tail‐to‐tail domain walls.
Haidong Lu   +11 more
wiley   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

open access: yesAdvanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong   +22 more
wiley   +1 more source

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