Results 171 to 180 of about 2,934,887 (331)

Water-Processed Ultrathin Crystalline Indium-Boron-Oxide Channel for High-Performance Thin-Film Transistor Applications. [PDF]

Nanomaterials (Basel), 2022
Xu W, Peng T, Li Y, Xu F, Zhang Y, Zhao C, Fang M, Han S, Zhu D, Cao P, Liu W, Lu Y.   +11 more
europepmc   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Thin film growth : physics, materials science and applications /

, 2011
Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these ...
Cao, Zexianedt
core  

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +1 more source

Synthesis, Characterization, and Thin-Film Transistor Response of Benzo[i]pentahelicene-3,6-dione. [PDF]

Molecules, 2022
Bracciale MP, Kwon G, Ho D, Kim C, Santarelli ML, Marrocchi A.   +5 more
europepmc   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Preliminary characterization of the response of an organic thin film transistor to ionizing radiation

, 2017
Organic thin film transistors (OTFTs) were investigated as novel radiation detectors. OTFTs were fabricated on glass and PET substrates, with a pentacene semiconductor, and PMMA or Parylene-C dielectric.
Hupman, Michael
core  

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor. [PDF]

Micromachines (Basel)
Guo L, Wang Q, Wang C, Chu X, Hao Y, Chi Y, Yang X.   +6 more
europepmc   +1 more source

Non-Contact Optical Detection of Foreign Materials Adhered to Color Filter and Thin-Film Transistor. [PDF]

Micromachines (Basel), 2022
Tzu FM, Hsu SH, Chen JS.
europepmc   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source