Results 151 to 160 of about 203,665 (317)

Broadband All‐Optical Memtransistor Based on Organic Cocrystals for Noise‐Robust Motion Recognition

open access: yesAdvanced Science, EarlyView.
This work presents an all‐optical synaptic transistor using DTT‐TCNQ organic charge transfer cocrystals, achieving broadband bidirectional modulation (395–808 nm) with highly linear synaptic plasticity (nonlinearity coefficients αp = 0.00191, αd = 0.00305).
Zhaohui Cai   +8 more
wiley   +1 more source

Time-temperature superposition principle at nanoscale

open access: yesTime-temperature superposition principle at nanoscale
identifier:oai:t2r2.star.titech.ac.jp ...
openaire   +1 more source

Stimuli‐Responsive Supramolecular Biomaterials for Cancer Theranostics

open access: yesAdvanced Science, EarlyView.
The ultimate goal of cancer theranostics is to get imaging agents and therapeutic cargo to tumor sites when and where they are required. “Smart” systems should be developed. This review discusses the characteristics of physiological stimuli, types and action modes of external stimuli, construction approaches and working principles, as well as ...
Wenting Hu   +4 more
wiley   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

open access: yesAdvanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz   +8 more
wiley   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

open access: yesAdvanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu   +15 more
wiley   +1 more source

Physical Origin of Temperature Induced Activation Energy Switching in Electrically Conductive Cement

open access: yesAdvanced Science, EarlyView.
The temperature‐induced Arrhenius activation energy switching phenomenon of electrical conduction in electrically conductive cement originates from structural degradation within the biphasic ionic‐electronic conduction architecture and shows percolation‐governed characteristics: pore network opening dominates the low‐percolation regime with downward ...
Jiacheng Zhang   +7 more
wiley   +1 more source

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor

open access: yesAdvanced Science, EarlyView.
A wafer‐scalable memristor based on 2D Sr2Nb3O₁₀ perovskite oxide nanosheets exhibits dual bipolar resistive switching through controllable oxygen ion migration and redox reactions. This single device enables both STDP and anti‐STDP synaptic functions, achieving 86.4% MNIST accuracy in supervised spiking neural networks, offering a compact, energy ...
Sohwi Kim   +11 more
wiley   +1 more source

Ultrafast Laser‐Induced Interatomic Forces in Magnetostrictive Metals

open access: yesAdvanced Science, EarlyView.
This study reports ultrafast changes in the interatomic forces generated by femtosecond laser excitation in magnetostrictive FeGa thin films. This ultrafast process manifests as an optical birefringence signal lasting ≈400 fs. Using a pump‐probe system, the femtosecond evolution of this nonequilibrium interatomic interaction is visualized, providing ...
Xiaoxue Zeng   +9 more
wiley   +1 more source

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