Results 171 to 180 of about 203,665 (317)
Time-Temperature Superposition of the Dissolution of Wool Yarns in the Ionic Liquid 1-Ethyl-3-methylimidazolium Acetate. [PDF]
Materials (Basel)Alghamdi AS, Hine PJ, Ries ME.
europepmc +1 more source
Advanced Science, EarlyView.Herein, thermally robust poly(ether ether ketone)‐based composites reinforced by a hierarchical Fe3O4/carbon nanotubes/reduced graphene oxide (Fe3O4/CNTs/rGO) network are reported, delivering wide‐temperature‐range broadband electromagnetic wave absorption (298–573 K; minimum reflection loss (RLmin) ≈ −66 dB).
Liang Zhao +8 more
wiley +1 more source
Revealing the Impact of Viscoelastic Characteristics on Performance Parameters of UV-Crosslinked Hotmelt Pressure-Sensitive Adhesives: Insights from Time-Temperature Superposition Analysis. [PDF]
Polymers (Basel)Guder M +4 more
europepmc +1 more source
Advanced Science, EarlyView.The perfect crystal packing achieved via the halogen‐bond (XB) coupled halogenated‐π‐conjugation strategy effectively induces an ultrahigh birefringence (Δn = 0.97), which exhibits promising potential in polarization control and phase modulation.
Miao‐Bin Xu +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Combining high polymer orientation of n‐type copolymers by temperature rubbing and sequential doping with N‐DMBI results in a strong improvement of electrical conductivity and thermoelectric power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
Shubhradip Guchait +7 more
wiley +1 more source
Prediction of Long-Term Strength of Thermoplastic Composites Using Time-Temperature Superposition
, 2013 James R. Reeder
openalex +1 more source
Advanced Electronic Materials, EarlyView.The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann +3 more
wiley +1 more source
Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source