Results 121 to 130 of about 71,627 (246)
Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb +3 more
wiley +1 more source
Determination of Vibration Properties and Reliable Frequency Estimation for Synchronous Vibrations Through Improved Blade Tip Timing Techniques Without a Once-per-Revolution Sensor. [PDF]
Sasakaros M +3 more
europepmc +1 more source
Residual adhesive after electrode loading in adhesive‐assisted resistance spot welding is quantified through a traceable experimental‐to‐digital workflow. Chromatic confocal topography provides calibrated surface‐height data, while OpenCV detects the electrode imprint and integrates adhesive height into comparable volume metrics.
Sung‐Min Wi, Jiangdong Zhao
wiley +1 more source
DNA strands are employed both as dynamic linkers and nanoscale templates for the integration of Ag2S nanoparticles on MoS2, which in turn imparted photothermal responsiveness; this feature permits the selective cargo (fluorophore, quantum dots or an enzyme) release from the MoS2 surface in response to local heat induced by light irradiation.
Kai Chen +3 more
wiley +1 more source
Tipping time in a stochastic phosphorus dynamics model
Anji Yang, Tingting Yu, Tonghua Zhang
openaire +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
BLADE FISSURE DETERMINATION BY MEANS OF BLADE TIP-TIMING
Viktor Mileshin +2 more
openaire +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source

