Results 131 to 140 of about 333,993 (186)
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Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
Japanese Journal of Applied Physics, 1991Formation of a titanium nitride (TiN) layer by the nitridation of Ti in high-pressure (5.8 atm) ammonium (NH3) ambient is studied. A thick TiN layer is formed in high-pressure nitridation. Solid-phase silicidation reaction occurs at Ti/Si during the nitridation.
Shih-Chang Chen +6 more
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Laser surface nitriding of titanium and a titanium alloy
Journal of Materials Processing Technology, 1992Surfaces of titanium and titanium alloy IMI829 have been nitrided by laser melting in nitrogen and in a gas mixture containing various proportions of argon and nitrogen. The nitrided layers have been characterised with respect to their hardness, microstructure, chemical composition, corrosion properties and surface finish.
Weerasinghe, V.M. +2 more
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The production of titanium nitride by the carbothermal nitridation of titanium dioxide powder
Journal of the European Ceramic Society, 1991Abstract Titanium dioxide powders have been nitrided using a nitrogen-5% hydrogen gas mixture in the presence of carbon at temperatures between 1200 and 1500°C. The rate of titanium nitride formation is sensitive to the titanium dioxide particle surface area, and the morphology of the product corresponds closely to that of the starting oxide ...
Wen-Yu Li, F.L. Riley
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Titanium and titanium nitride contacts to n-type gallium nitride
Semiconductor Science and Technology, 1998Ti (150 nm), TiN (200 nm) and Ti (5 nm)/TiN (200 nm) contacts have been fabricated on n-type GaN (Si doped , ) and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and C in Ar and to observe the effects of annealing environment on ohmic contact ...
B P Luther, S E Mohney, T N Jackson
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Titanium Nitride and Titanium Carbide as Semiconductors
Nature, 1954IT is well known that titanium nitride shows the electric properties of a typical metal1. In fact, the specific resistivity ρ is lower than that of titanium metal itself. We have re-examined these experiments, using van Arkels's technique2 of deposition from the vapour phase for the preparation.
A. MÜNSTER, K. SAGEL, G. SCHLAMP
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Synthesis of Nanocrystalline Titanium Nitride Powders by Direct Nitridation of Titanium Oxide
Journal of the American Ceramic Society, 2001Nanocrystalline TiN powder has been synthesized by the direct nitridation of nanocrystalline TiO 2 powder. Powder XRD patterns indicated that the TiN nanocrystalline powder could be obtained by nitridation at 800°C for 5 h.
Jingguo Li +5 more
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Corrosion Behavior of Coatings of Titanium Nitride and Titanium-Titanium Nitride on Steel Substrates
Corrosion, 2006It is well known that titanium nitride (TiN) coatings produced by physical vapor deposition (PVD) have a limited corrosion resistance, as a result of their intrinsic porosity. Some attempts have been made to improve corrosion resistance, by such measures as increasing film thickness.
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Surface Science Spectra, 1998
Titanium nitride (TiN) coatings have been deposited on polished steel substrates by a plasma-beam sputtering technique in a Sputron apparatus (Balzers A. G.) at 200 °C. A thin intermediate layer of Ti (0.08 μm) was deposited between the substrate and the 2.8 μm thick TiN coating.
Ingrid Milošev +3 more
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Titanium nitride (TiN) coatings have been deposited on polished steel substrates by a plasma-beam sputtering technique in a Sputron apparatus (Balzers A. G.) at 200 °C. A thin intermediate layer of Ti (0.08 μm) was deposited between the substrate and the 2.8 μm thick TiN coating.
Ingrid Milošev +3 more
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Metal Science and Heat Treatment, 1973
Nitriding at pressures from 300 to 10−2 mm Hg with the nitrogen inflow cut off and holding at low pressure is the best method of obtaining a case of substantial depth, with satisfactory mechanical properties of the base metal.
V. I. Murav'ev, A. A. Govorov
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Nitriding at pressures from 300 to 10−2 mm Hg with the nitrogen inflow cut off and holding at low pressure is the best method of obtaining a case of substantial depth, with satisfactory mechanical properties of the base metal.
V. I. Murav'ev, A. A. Govorov
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Defect and Diffusion Forum, 2011
Gas nitriding of a commercial purity Grade 4 titanium at 1120°C for 5 h formed hard TiN layer (2450 HV) on the surface with a thickness of about 35 m. When compared to the as-received state, nitrided titanium exhibited excellent wear resistance along with a relatively low coefficient of friction (CoF) against Al2O3 ball under dry sliding conditions.
Fared Seahjani, H. Çimenoğlu
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Gas nitriding of a commercial purity Grade 4 titanium at 1120°C for 5 h formed hard TiN layer (2450 HV) on the surface with a thickness of about 35 m. When compared to the as-received state, nitrided titanium exhibited excellent wear resistance along with a relatively low coefficient of friction (CoF) against Al2O3 ball under dry sliding conditions.
Fared Seahjani, H. Çimenoğlu
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