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Anti‐Slip Material‐Based Strategies and Approaches
Advanced Materials Technologies, Volume 11, Issue 10, 22 May 2026.This review highlights the principle mechanisms of slipping at the microscale, linking contact mechanics with a friction behavior model for surface interfaces. Main strategies to develop anti‐slip properties to the surfaces are discussed alongside standardized testing approaches.
Sogand Abbaspoor‐Zanjani +3 more
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Synthesis of Titanium Nitride from Titanium Hydride or Metalic Titanium Powder with Nitrogen and Nitriding Velocityopenaire
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Hemocompatibility of Titanium Nitride
The International Journal of Artificial Organs, 1992The left ventricular assist device is based on the principle of the Maillard-Wenkel rotative pump. The materials which make up the pump must present particular mechanical, tribological, thermal and chemical properties. Titanium nitride (TiN) because of its surface properties and graphite because of its bulk characteristics have been chosen.
I, Dion +3 more
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Effect of plasma nitriding and titanium nitride coating on the corrosion resistance of titanium
The Journal of Prosthetic Dentistry, 2016The passive film on the surface of titanium can be destroyed by immersion in a fluoridated acidic medium. Coating with titanium nitride (TiN) may improve the corrosion resistance of titanium.The purpose of this in vitro study was to investigate the effect of duplex treatment with plasma nitriding and TiN coating on the corrosion resistance of cast ...
Xianli, Wang +11 more
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Reduction‐Nitridation Synthesis of Titanium Nitride Nanocrystals
Journal of the American Ceramic Society, 2003Titanium nitride (TiN) particles (8 nm) were prepared via a reduction‐nitridation route in an autoclave at 500°C, using TiCl 4 , NH 4 Cl, and metal Na as reactants.
Xiaogang Yang +4 more
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The production of titanium nitride by the carbothermal nitridation of titanium dioxide powder
Journal of the European Ceramic Society, 1991Abstract Titanium dioxide powders have been nitrided using a nitrogen-5% hydrogen gas mixture in the presence of carbon at temperatures between 1200 and 1500°C. The rate of titanium nitride formation is sensitive to the titanium dioxide particle surface area, and the morphology of the product corresponds closely to that of the starting oxide ...
Wen-Yu Li, F.L. Riley
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Titanium and titanium nitride contacts to n-type gallium nitride
Semiconductor Science and Technology, 1998Ti (150 nm), TiN (200 nm) and Ti (5 nm)/TiN (200 nm) contacts have been fabricated on n-type GaN (Si doped , ) and characterized by specific contact resistance measurements and by x-ray photoelectron spectroscopy depth profiling. Ti contacts were annealed between 400 and C in Ar and to observe the effects of annealing environment on ohmic contact ...
B P Luther, S E Mohney, T N Jackson
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Formation of Titanium Nitride/Titanium Silicide by High Pressure Nitridation in Titanium/Silicon
Japanese Journal of Applied Physics, 1991Formation of a titanium nitride (TiN) layer by the nitridation of Ti in high-pressure (5.8 atm) ammonium (NH3) ambient is studied. A thick TiN layer is formed in high-pressure nitridation. Solid-phase silicidation reaction occurs at Ti/Si during the nitridation.
Shih-Chang Chen +6 more
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Surface Science Spectra, 1998
Titanium nitride (TiN) coatings have been deposited on polished steel substrates by a plasma-beam sputtering technique in a Sputron apparatus (Balzers A. G.) at 200 °C. A thin intermediate layer of Ti (0.08 μm) was deposited between the substrate and the 2.8 μm thick TiN coating.
Ingrid Milošev +3 more
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Titanium nitride (TiN) coatings have been deposited on polished steel substrates by a plasma-beam sputtering technique in a Sputron apparatus (Balzers A. G.) at 200 °C. A thin intermediate layer of Ti (0.08 μm) was deposited between the substrate and the 2.8 μm thick TiN coating.
Ingrid Milošev +3 more
openaire +1 more source
Titanium Nitride and Titanium Carbide as Semiconductors
Nature, 1954IT is well known that titanium nitride shows the electric properties of a typical metal1. In fact, the specific resistivity ρ is lower than that of titanium metal itself. We have re-examined these experiments, using van Arkels's technique2 of deposition from the vapour phase for the preparation.
A. MÜNSTER, K. SAGEL, G. SCHLAMP
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