Results 171 to 180 of about 53,071 (272)

Topological Dirac-vortex modes in a three-dimensional photonic topological insulator. [PDF]

Nat Commun
Yan B, Qi Y, Wang Z, Meng Y, Yang L, Zhu ZX, Chen JM, Zhong Y, Cheng MQ, Xi X, Gao Z.   +10 more
europepmc   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

Advanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith, Ryan D. McKenzie, Alban Joseph, Robert L. Stamps, Rair Macêdo   +4 more
wiley   +1 more source

Antiferromagnet-topological insulator heterostructure for polarization-controllable terahertz generation. [PDF]

Nat Commun
Cheng Y, Zhou F, Teng J, Li P, Jiang L, Gong P, Li Y, Wu X, Kärtner FX, Zhao J.   +9 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Second and third harmonic generation in topological insulator-based van der Waals metamaterials. [PDF]

Light Sci Appl
Di Gaspare A, Ghayeb Zamharir S, Knox C, Yagmur A, Sasaki S, Salih M, Li L, Linfield EH, Freeman J, Vitiello MS.   +9 more
europepmc   +1 more source

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn2Sb2

Advanced Electronic Materials, EarlyView.
Pressure tunes the delicate balance between structure, magnetism, and electronic states in quantum materials. In YbMn2Sb2, high‐pressure X‐ray and neutron diffraction reveal a trigonal‐to‐monoclinic transition near 3.5 GPa, accompanied by unconventional magnetic ordering.
Mingyu Xu, Matt Boswell, Aya Rutherford, Cheng Peng, Ying Zhou, Shuyang Wang, Zhaorong Yang, Antonio M. dos Santos, Haidong Zhou, Weiwei Xie   +9 more
wiley   +1 more source

Tracing terahertz plasmon polaritons with a tunable-by-design dispersion in topological insulator metaelements. [PDF]

Light Sci Appl
Viti L, Schiattarella C, Sichert L, Wang Z, Law S, Mitrofanov O, Vitiello MS.   +6 more
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Photonic antiferromagnetic topological insulator with a single surface Dirac cone. [PDF]

Sci Adv
Chen F, Han N, Pu S, Zhao R, Zhang L, Chen Q, Hu Y, Tong M, Li W, Wu J, Ren Y, Li X, Yin W, Chen H, Zhang RX, Yang Y.   +15 more
europepmc   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
wiley   +1 more source