Results 301 to 310 of about 551,694 (368)

Electric‐Field Control of Terahertz Response via Spin‐Corner‐Layer Coupling in Altermagnetic Bilayers

Advanced Science, EarlyView.
A spin‐corner‐layer coupling mechanism is proposed in 2D altermagnetic bilayers. Exemplified by NiZrI6, the spin, layer, and topological corner states are simultaneously controlled by an ultralow electric field, enabling active modulation of terahertz absorption, emission, and polarization.
Jianhua Wang, Yilin Han, Shifeng Qian, Zhenxiang Cheng, Wenhong Wang, Zhi‐Ming Yu, Xiaotian Wang   +6 more
wiley   +1 more source

Chemical Interactions at the Interface of Au on Bi₂Se₃ Topological Insulator. [PDF]

J Phys Chem C Nanomater Interfaces
Valant M, Gardonio S, Estandia S, Fanetti M, Matetskiy AV, Sheverdyaeva PM, Moras P, Tileli V.   +7 more
europepmc   +1 more source

Influence of disorder on antidot vortex Majorana states in three-dimensional topological insulators

Rafał Rechciński, Aleksei Khindanov, Dmitry I. Pikulin, J. Liao, Leonid P. Rokhinson, Yong P. Chen, Roman M. Lutchyn, Jukka I. Väyrynen   +7 more
openalex   +2 more sources

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe2

Advanced Science, EarlyView.
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li, Jiazhen Wu, Sirong Lu, Lei Liang, Wenying Zhou, Bingke Zhang, Degang Zhao, Fucai Liu   +7 more
wiley   +1 more source

Influence of Metal Interlayers on Spin-Charge Conversion in Sb₂Te₃ Topological Insulator-Based Devices. [PDF]

Nano Lett
Longo E, Belli M, Wiemer C, Lamperti A, Matetskiy AV, Shevedyaeva PM, Moras P, Fanciulli M, Mantovan R.   +8 more
europepmc   +1 more source

Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP2S6

Advanced Science, EarlyView.
Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao, Wenhao Li, Fei Sun, Ziyi Zhou, Zhihao Shen, Jianwei Liang, He Jiang, Weiming Xiong, Weijin Chen, Xiaoyue Zhang, Yi Zhang, Xinzhi Liu, Yue Zheng   +12 more
wiley   +1 more source

Fabricating a hexagonal FeTe monolayer with a moiré superlattice on topological insulator Bi₂Te₃. [PDF]

Nanoscale Adv
Lin YH, Chung YH, Chen GY, Lee HC, Kumar N, Chen CJ, Lin JA, Mou CY, MacDonald AH, Shih CK, Luh DA, Su JJ, Hsu PJ.   +12 more
europepmc   +1 more source

Extreme Transverse Magnetoresistance in TiZn16

Advanced Electronic Materials, EarlyView.
Extreme magnetoresistance is observed in TiZn16, despite its metallic nature and a highly complex electronic structure with multiple electron and hole Fermi surfaces. High‐magnetic‐field measurements further revealed the presence of a cylindrical open orbit, which may help resolve the origin of the extreme magnetoresistance.
Aaron Chan, Guoxin Zheng, Dechen Zhang, Yuan Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna Billingsley, Tai Kong, Na Hyun Jo, Lu Li   +11 more
wiley   +1 more source

Realization of a quadrupole topological insulator phase in a gyromagnetic photonic crystal. [PDF]

Natl Sci Rev
Zhou P, Liu GG, Wang Z, Li S, Xie Q, Zhang Y, Mandal S, Xi X, Gao Z, Deng L, Zhang B.   +10 more
europepmc   +1 more source

High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes

Advanced Electronic Materials, EarlyView.
We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li, Haoyu Zhang, Xinyi Zheng, Weifeng Wu, Xiaowei He, Li Ding, Sheng Wang   +6 more
wiley   +1 more source