Results 151 to 160 of about 403,912 (359)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere   +5 more
wiley   +1 more source

Tailoring Microstructure in Copper‐Based Conductive Metal–Organic Frameworks for Enhanced Chemiresistive Sensing and Uptake of Sulfur Dioxide

open access: yesAdvanced Functional Materials, EarlyView.
Precursor‐ and solvent‐mediated synthesis yields four Cu3(HHTP)2 morphologies with distinct physicochemical, sorption, and sensing properties toward SO2. Uptake capacities correlate with BET surface area, while sensing performance scales with particle aspect ratio.
Patrick Damacet   +5 more
wiley   +1 more source

Microsphere Autolithography—A Scalable Approach for Arbitrary Patterning of Dielectric Spheres

open access: yesAdvanced Functional Materials, EarlyView.
MicroSphere Autolithography (µSAL) enables scalable fabrication of patchy particles with customizable surface motifs. Focusing light through dielectric microspheres creates well defined, tunable patches via a conformal poly(dopamine) photoresist. Nearly arbitrary surface patterns can be achieved, with the resolution set by the index contrast between ...
Elliott D. Kunkel   +3 more
wiley   +1 more source

Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis

open access: yesAdvanced Functional Materials, EarlyView.
An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra   +8 more
wiley   +1 more source

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