Results 71 to 80 of about 3,793 (226)

Simulation study on high-linearity GaN HEMT featuring graded-composition composite channel

Dianzi Jishu Yingyong
This work proposes and simulates a high-linearity GaN HEMT device using Technology Computer Aided Design (TCAD). The device features a composite channel based on graded-composite AlGaN and InGaN layers.
Li Shiquan, Cai Likang, Lin Gang, Zhang Junyun   +3 more
doaj   +1 more source

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

Advanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +1 more source

Investigating Pocket-Engineered Tree-Based NSFETs With Asymmetric Spacers

IEEE Access
This work investigates the impact of pocket doping concentration variation from $1 \times 10^{17}$ to $5 \times 10^{18}$ cm−3 on the DC, analog, and RF performance of a proposed FET device, demonstrating that tailored pocket engineering ...
Akash Mandal, Anubhab Saha, Raj Saha, Udai P. Singh, Subir Kumar Maity, Rajendra Prasad   +5 more
doaj   +1 more source

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

Advanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon, Jaepyo Jang, Hyunjin Jung, Duhwan Seong, Daeun Kim, Yewon Jeon, Ja Hoon Koo, Sang Min Won, Donghee Son   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

An Ultra-Low-Voltage Transconductance Stable and Enhanced OTA for ECG Signal Processing

Micromachines
In this paper, a rail-to-rail transconductance stable and enhanced ultra-low-voltage operational transconductance amplifier (OTA) is proposed for electrocardiogram (ECG) signal processing. The variation regularity of the bulk transconductance of pMOS and
Yue Yin, Xinbing Zhang, Ziting Feng, Haobo Qi, Haodong Lu, Jiayu He, Chaoqi Jin, Yihao Luo   +7 more
doaj   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Digitally Programmable Integrator and Differentiator

Active and Passive Electronic Components, 1995
Digitally programmable integrator and differentiator circuits are presented. Each circuit uses at most one operational amplifier, two operational transconductance amplifiers, and one capacitor.
Abdulrahman Khalaf Al-Ali, Muhammad Taher Abuelma'atti, Syed Yunus   +2 more
doaj   +1 more source