Results 51 to 60 of about 3,734 (208)

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

ON THE DESIGN OF NEW CMOS DO-OTA TOPOLOGIES PROVIDING HIGH OUTPUT IMPEDANCE AND EXTENDED LINEARITY RANGE

Electrica, 2005
In this paper, new realization techniques to enhance the performance of the CMOS differential output transconductance amplifiers (DO-OTAs) are proposed by combining the high-performance input and output stages given in the literature.
Burçin Serter Ergün, H. Hakan Kuntman
doaj   +2 more sources

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

Advanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci, Marcos Luginieski, Germán D. Gómez Higuita, Gerwin Dijk, Bianca de A. Feitosa, Yaakov Tuchman, Alberto Salleo, Gregório Couto Faria   +7 more
wiley   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Selenophene π‐Bridge Enables Balanced Ambipolar Transport in High‐Performance Organic Electrochemical Transistors

Advanced Science, EarlyView.
We synthesized a high‐performance balanced ambipolar OECT polymer, P(gTDPPSe), via selenophene π‐bridge engineering. The selenophene π‐bridge enhances backbone planarity and optimizes the energy levels for doping, enabling high and balanced p/n‐type transconductance‐a key factor for high‐gain complementary inverters.
Guichuan Zhu, Yueping Lai, Jiaxing Pu, Jianhua Chen, Liang‐Wen Feng   +4 more
wiley   +1 more source

gm/Id$g_m/I_d$ Analysis of vertical nanowire III–V TFETs

Electronics Letters, 2023
Experimental data on analog performance of gate‐all‐around III‐V vertical Tunnel Field‐Effect Transistors (TFETs) and circuits are presented. The individual device shows a minimal subthreshold swing of 44 mV/dec and transconductance efficiency of 50 V−1 ...
Gautham Rangasamy, Zhongyunshen Zhu, Lars Ohlsson Fhager, Lars‐Erik Wernersson   +3 more
doaj   +1 more source

Thermally Driven Supramolecular Chirality Evolution in Low‐Bandgap Fused‐Ring Conjugated Molecules for High‐Performance NIR Circularly Polarized Light Detection

Advanced Science, EarlyView.
A supramolecular chirality evolution strategy in chiral low‐bandgap fused‐ring conjugated molecules enables high‐performance near‐infrared (NIR) circularly polarized light photodetection. Halogen substitution and thermal annealing induce chiral amplification and hierarchical ordering. Integrated into Schottky barrier vertical transistors, the optimized
Jaeyong Ahn, Kwangmin Kim, Sangwook Lee, Seul Lee, SungHyun Hur, BongSoo Kim, Joon Hak Oh   +6 more
wiley   +1 more source

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

Journal of Nanotechnology, 2011
We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon ...
Guiru Gu, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, Vijaya Kayastha, Nick L. Downing, Xuliang Han, Harish Subbaraman, Dan Pham, Ray T. Chen, Maggie Yihong Chen, Urs Berger, Mike Renn   +15 more
doaj   +1 more source

A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces

Sensors, 2020
The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces.
Jacek Jakusz, Waldemar Jendernalik, Grzegorz Blakiewicz, Miron Kłosowski, Stanisław Szczepański   +4 more
doaj   +1 more source