Results 161 to 170 of about 3,734 (208)
Some of the next articles are maybe not open access.
Transconductance Filter Synthesis with NAM
2016 IEEE Intl Conference on Computational Science and Engineering (CSE) and IEEE Intl Conference on Embedded and Ubiquitous Computing (EUC) and 15th Intl Symposium on Distributed Computing and Applications for Business Engineering (DCABES), 2016A systematic synthesis method to generate transconductance filters using nodal admittance matrix (NAM) expansion is proposed. The obtained circuits with two input voltage terminals and three output currents employing only two grounded capacitors and three resistors can be used to realize the transconductance-mode universal filter.
Chien-Ming Wang +4 more
openaire +1 more source
Optically controlled transconductance amplifier
Proceedings of the International Conference & Workshop on Emerging Trends in Technology, 2011This paper presents Y parameter analysis for optically gated MOSFET at RF frequency. Simulation is done using MATLAB and analysis for Y parameter is done under dark and illuminated condition for varying optical power. It has been seen that device transconductance is highly influenced by optical illumination even for small optical power. Optical effects
B. K. Mishra 0001 +3 more
openaire +1 more source
CMOS Voltage Differencing Transconductance Amplifier with Linearly Adjustable Transconductance Gains
2019 5th International Conference on Engineering, Applied Sciences and Technology (ICEAST), 2019In this work, a circuit configuration for the realization the CMOS voltage differencing transconductance amplifier (VDTA) with linear tunable transconductance and wide-input dynamic range is introduced. The circuit design technique is achieved by squaring the long-tail bias current of the differential-input voltage-to-current converter circuit.
Natchanai Roongmuanpha +3 more
openaire +1 more source
SPIE Proceedings, 1987
Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length.
G. Ebert, A. Colquhoun
openaire +1 more source
Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length.
G. Ebert, A. Colquhoun
openaire +1 more source
Transconductance of electron tubes
Electrical Engineering, 1949ALL OF the functions of an electron tube when used as an amplifier, modulator, frequency doubler, or rectifier, can be formulated in terms of a plate-current-grid-voltage (i-e) characteristic expressed as the sum of constant, linear, and square terms in e.
openaire +1 more source
Transconductance properties of plasmas
IRE Transactions on Antennas and Propagation, 1962Radio-frequency effects arising from motions of the electrons and ions in plasmas are reviewed. Starting with cases of simple straight line orbits, the relationship between theory and experiment is cited in regard to wave dispersion, damping, amplification, and radiation. Circular and spiral orbits as well as linear and drifting-linear vibration orbits
openaire +1 more source
Tuning the Transconductance of Organic Electrochemical Transistors
Advanced Functional Materials, 2021Björn Lüssem +2 more
exaly
An enhanced bulk-driven OTA with high transconductance against CMOS scaling
AEU - International Journal of Electronics and Communications, 2021Liyuan Dong +2 more
exaly