Results 31 to 40 of about 3,734 (208)

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

open access: yesMicromachines, 2023
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang   +10 more
doaj   +1 more source

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

open access: yesIEEE Access, 2019
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi   +2 more
doaj   +1 more source

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

open access: yesIEEE Journal of the Electron Devices Society, 2015
An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey   +2 more
doaj   +1 more source

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

open access: yesSensors, 2022
A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process.
Tahesin Samira Delwar   +5 more
doaj   +1 more source

Channel length effects on the performance of vOECTs

open access: yesMaterials Research Express
Channel length ( L ), the most important parameter of various transistors, determines the transistor performance and integration density. Emerging vertical organic electrochemical transistors (vOECTs), easily enabling L of less than 100 nm, show ...
Jinjie Wen   +9 more
doaj   +1 more source

Electrocapillary Modulated Interfacial Tension Amplifies Liquid Metal Transduction

open access: yesAdvanced Functional Materials, EarlyView.
This study presented an electrocapillary‐enhanced magnetohydrodynamic pumping strategy that harnesses the Lorentz force and interfacial tension modulation of liquid metal droplets to achieve amplified fluidic power. The system enabled low‐voltage, self‐oscillating fluidic transduction with enhanced pressure and flow generation, supporting compact ...
Saba Firouznia   +3 more
wiley   +1 more source

The effect of nutrient broth media on PEDOT:PSS gated OECTs for whole-cell bacteria detection

open access: yesBiosensors and Bioelectronics: X, 2022
The organic electrochemical transistor (OECT) is a device of much interest in biological sensing applications, including the detection of various cell types and electrolytes.
Eric Frantz   +3 more
doaj   +1 more source

Gate‐Programmable Linearization of Atomically Thin Nanoelectromechanical Resonators via Duffing Nonlinearity Cancellation

open access: yesAdvanced Functional Materials, EarlyView.
Gate bias is used to cancel Duffing nonlinearity in atomically thin MoS2 drumhead resonators, switching their response from hardening to softening and creating a nearly linear operating point. This electrical control suppresses hysteresis, enables stronger linear drive, and improves signal‐to‐noise ratio, offering a practical route to stable 2D NEMS ...
Pengcheng Zhang   +3 more
wiley   +1 more source

A High Gain Operational Amplifier With Dual-Tail Source Architecture for Fast Slewing

open access: yesIEEE Open Journal of Circuits and Systems
This work introduces an enhanced operational amplifier architecture in which four flipped voltage follower (FVF) cells act as adaptive tail current sources to improve the performance of a conventional current mirror (CM)-based design.
Meysam Akbari   +3 more
doaj   +1 more source

Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis

open access: yesIEEE Journal of the Electron Devices Society, 2019
This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the ...
Mandar S. Bhoir   +6 more
doaj   +1 more source

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