Results 61 to 70 of about 3,734 (208)

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Flanking‐Group Engineering Unlocks Emerging Functionalities in Diketopyrrolopyrrole Semiconductors

Advanced Science, EarlyView.
This review presents a comprehensive and unified perspective of flanking‐group engineering in Diketopyrrolopyrrole (DPP) based organic semiconductors that connects molecular‐level design with cross‐device functionalities. By integrating insights from molecular design, solid‐state packing, and device physics, this review seeks to establish general ...
Xiaoyun Wu, Shanshan Zhou, Meng Li, Aung Ko Ko Kyaw, Xiao‐Lei Shi, Qian Liu   +5 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

MOF-MoS2 nanosheets doped PEDOT:PSS for organic electrochemical transistors in enhanced glucose sensing and machine learning-based concentration prediction

Materials Futures
Organic electrochemical transistors (OECTs) are regarded as a promising platform for chemical and biological sensing due to their biocompatibility, cost-effectiveness and flexibility. However, maintaining long-term stability of OECTs while achieving high
Yali Sun, Yun Li, Yang Zhou, Ting Cai, Yuxuan Chen, Chao Zou, Han Song, Shenghuang Lin, Shenghua Liu   +8 more
doaj   +1 more source

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2012
The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi, Hamid Reza Taghva, Homayoun Mahdavi-Nasab   +2 more
doaj  

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source