Results 71 to 80 of about 3,763 (221)
[Purposes] Previously, pH sensors have been fabricated based on pH-sensitive poly (3,4-ethylenedioxythiophene)/bromothymol blue film and the semiconducting layer of poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate and a theoretical model has been ...
WANG Zhenxing +7 more
doaj +1 more source
Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier
New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors.
Muhammad Taher Abuelma'atti +1 more
doaj +1 more source
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures
In this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures.
Wajid Manzoor +2 more
doaj +1 more source
Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh +3 more
wiley +1 more source
Prediction of GaAs metal–semiconductor field-effect transistor parameter spread
It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a ...
N. B. Gorev +2 more
doaj
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K.
Rhaycen R. Prates +5 more
doaj +1 more source
On the Design of a Class of Analog Filters Whose Impulse Response Is a Mittag‐Leffler Function
Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known forms are summarized in this work. Simulation results using Cadence and experimental results using an FPAA validate the introduced concept. ABSTRACT Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known
Julia Nako +3 more
wiley +1 more source
A co‐designed implicit‐reset phase‐frequency detector (PFD) and nonlinear amplifier‐assisted charge pump (CP) achieve dead zone‐free operation from 10 MHz to 4.7 GHz with < 0.5% current mismatch without calibration, enabling −80 dBc of reference spur and 0.50 ps of RMS jitter in a 180 nm of CMOS PLL.
A. Ghaemnia +3 more
wiley +1 more source
The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors
The high transconductance gm of organic electrochemical transistors (OECTs) has received widespread attention and made OECTs a valid candidate for wearable sensor systems.
Michael Skowrons +3 more
doaj +1 more source

