Results 111 to 120 of about 3,951 (223)
Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor
Advanced Electronic Materials, Volume 12, Issue 19, 12 October 2026.We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa +4 more
wiley +1 more source
Advanced Intelligent Discovery, Volume 2, Issue 5, October 2026.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source
Advanced Physics Research, Volume 5, Issue 10, October 2026.Heterostructured semiconductors enable synergistic interactions between complementary materials, improving charge transport, analyte adsorption, and signal transduction in chemical and biochemical sensors. Their integration allows for high sensitivity, selectivity, stability, and low‐power operation across gas and liquid‐phase devices, while novel ...
Martin Schwellberger Barbosa +2 more
wiley +1 more source
Sensitive Aptameric Sensing Platform Utilizing Reduced Graphene Oxide Field‐Effect Transistor
Chemistry–Methods, Volume 6, Issue 10, October 2026.The paper reports the development of a scalable, high‐performance reduced graphene oxide (RGO‐FET) biosensor engineered for ultra‐sensitive serotonin detection. Key breakthroughs are femtomolar sensitivity, low cost relative to achievable sensitivity and stability against fouling.
Co Dang Pham +3 more
wiley +1 more source
On the Design of a Class of Analog Filters Whose Impulse Response Is a Mittag‐Leffler Function
International Journal of Circuit Theory and Applications, Volume 54, Issue 10, Page 5173-5182, October 2026.Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known forms are summarized in this work. Simulation results using Cadence and experimental results using an FPAA validate the introduced concept. ABSTRACT Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known
Julia Nako +3 more
wiley +1 more source
A Low-Power Chopper-Stabilized Readout Interface ASIC for High-Resolution TMR Magnetometers. [PDF]
Micromachines (Basel)Rong W, Sun D, Zhang W, Ye H.
europepmc +1 more source
Subthreshold Time‐Mode All‐Digital DLL With Built‐In Linearization
International Journal of Circuit Theory and Applications, Volume 54, Issue 10, Page 5045-5061, October 2026.This paper presents a subthreshold time‐mode all‐digital delay‐locked loop (DLL) for low‐frequency clock generation. The large and tunable delay of the DLL is obtained using a static inverter delay line whose supply voltage is in the vicinity of 100 mV and adjustable by varying supply voltage. Phase error is processed by a time‐mode proportional block (
Fei Yuan, Wenhao Wu, Yushi Zhou
wiley +1 more source
High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching. [PDF]
Micromachines (Basel)Ding Y +9 more
europepmc +1 more source
An Ultra‐Low‐Power Biopotential Acquisition Analog Front‐End Chip for Wearable Devices
International Journal of Circuit Theory and Applications, Volume 54, Issue 10, Page 5030-5044, October 2026.A 0.8‐V, 1.2‐μW biopotential AFE combines a chopper‐stabilized CCIA with dual‐time‐scale EDO management. The slow DSL preserves > 1 GΩ input impedance, whereas an event‐triggered fast‐recovery path shortens return to the linear range after abrupt electrode‐offset disturbances. ABSTRACT A 0.8‐V, 1.2‐μW biopotential analog front‐end (AFE) IC is presented
Zhang Xin +4 more
wiley +1 more source