Results 71 to 80 of about 3,951 (223)

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

Advanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon, Jaepyo Jang, Hyunjin Jung, Duhwan Seong, Daeun Kim, Yewon Jeon, Ja Hoon Koo, Sang Min Won, Donghee Son   +8 more
wiley   +1 more source

A Very‐High Frequency Solution‐Processed Organic Field‐Effect Transistor With Improved Voltage‐Normalized Frequency of Transition

Advanced Science, EarlyView.
Increasing the frequency at which organic electronics operate while limiting the operation voltage is key to enabling future sustainable wireless applications. This work shows p‐type organic field‐effect transistors based on a molecularly doped, small molecule/polymer blend (C8‐BTBT:C16IDT‐BT), fabricated via direct‐writing and solution‐processing ...
Tommaso Losi, Kyle van Oosterhout, Martino Cambiaggio, Martin Heeney, Qiao He, Hans Kleemann, Alessandro Luzio, Eugenio Cantatore, Mario Caironi   +8 more
wiley   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

Advanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee, Jihyang Park, Xinyi Wang, Yueqi Deng, Jiashu Ren, Tao Zhou   +5 more
wiley   +1 more source

Simulation study on high-linearity GaN HEMT featuring graded-composition composite channel

Dianzi Jishu Yingyong
This work proposes and simulates a high-linearity GaN HEMT device using Technology Computer Aided Design (TCAD). The device features a composite channel based on graded-composite AlGaN and InGaN layers.
Li Shiquan, Cai Likang, Lin Gang, Zhang Junyun   +3 more
doaj   +1 more source

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

Advanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki, Keitaro Yamamoto, Mitsuaki Yamauchi, Yoshiyuki Mizuhata, Hiroshi Matsuda, Nobutaka Shioya, Takeshi Hasegawa, Hiroko Yamada   +7 more
wiley   +1 more source

Investigating Pocket-Engineered Tree-Based NSFETs With Asymmetric Spacers

IEEE Access
This work investigates the impact of pocket doping concentration variation from $1 \times 10^{17}$ to $5 \times 10^{18}$ cm−3 on the DC, analog, and RF performance of a proposed FET device, demonstrating that tailored pocket engineering ...
Akash Mandal, Anubhab Saha, Raj Saha, Udai P. Singh, Subir Kumar Maity, Rajendra Prasad   +5 more
doaj   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

Advanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler, Ciril Reiner‐Rozman, Christoph Kleber, Jakub Dostalek, Wolfgang Knoll   +4 more
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Polymer Sequence Design of Zwitterionic Polymer/PEDOT:PSS Blend Films for Improved Charge Transport and Stability in Organic Electrochemical Transistors

Advanced Electronic Materials, EarlyView.
Solution blending of zwitterionic polymers with PEDOT:PSS provides a simple route to OECT materials with enhanced threshold voltage stability in biologically relevant environments. The polymer sequence alters outer‐domain structure within the preserved PEDOT:PSS framework, thereby tuning charge transport.
Wakana Takahashi, Aki Kashiwazaki, Masaya Mitsuishi, Shunsuke Yamamoto   +3 more
wiley   +1 more source