Results 141 to 150 of about 12,788 (255)

Preventing Plasma‐Induced Resist Hardening in Molybdenum Disulfide Transistors via Sacrificial Metal Mask Lithography

Small, EarlyView.
Photoresist (PR) residue significantly degrades the electrical performance of 2D semiconductors such as MoS2. In particular, the intrinsically ultrathin nature of these materials makes them highly susceptible to damage during conventional PR cleaning procedures.
Dahyeon Kim, Yanfeng Zhao, Sungyeon Kim, Seungchan Lee, Sangmin Eom, Tae Yeon Kim, Hyun Seok Lee, Joonki Suh, Byungjo Kim, Myungsoo Kim   +9 more
wiley   +1 more source

A Retinomorphic Graphene Transistor Implementing Direction‐ and Velocity‐Selective Computation for In‐Sensor Image Stabilization

Small, EarlyView.
A multi‐gated ion‐gel graphene transistor architecture emulates spatiotemporal dendritic filtering inspired by biological direction‐selective retinal circuits. Leveraging distributed resistance‐capacitive ionic relaxation delays under combined excitation‐inhibition pulse routines, the solid‐state device exhibits programmable direction‐selective index ...
Jun Ha Park, HoYeon Kim, Jinkyung Kim, Hyun Jae Jang, Jae Wook Kim, Jongkil Park, Seongsik Park, Inho Kim, Suyoun Lee, Gyu Weon Hwang, Byeong‐Kwon Ju, Kyeong‐Seok Lee   +11 more
wiley   +1 more source

Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance‐Enhanced Ion‐Sensitive Field‐Effect Transistors

Small, EarlyView.
Van der Waals integration of 1D tellurium nanowires with 2D graphene oxide enables high‐performance ISFET arrays with exceptional stability and apparent super‐Nernstian pH sensitivity, paving the way for next‐generation bioelectronic diagnostics and environmental monitoring.
Heping Cui, Kai Zheng, Joachim Knoch, Sven Ingebrandt   +3 more
wiley   +1 more source

Ionic Liquids at the Interface With the Transition Metal Dichalcogenide MoS2: Effect of the Chemical Structure on Induced Charge Carrier Density

Small, EarlyView.
Ionic liquid gating of MoS2 channels using [EMIM][TFSI] or [EMIM][BF4] can lead to different carrier densities. [TFSI]‐based systems exhibit steeper voltage decay (compared to [BF4]‐based systems) meaning the potential drops more rapidly across the electric double layer, indicating stronger local electric fields and more efficient charge accumulation ...
Anoir Hamdi, Iréné Amiehe Essomba, Kana Ishisone, Kerstin Falk, Michael Moseler, Ramin Karimi Azari, Tian Lan, Clara Santato, Mauro Boero, Guido Ori, Emanuele Orgiu   +10 more
wiley   +1 more source

Scalable Room‐Temperature Terahertz Graphene Cameras

Small Methods, EarlyView.
ABSTRACT Terahertz (THz) imaging has emerged as a powerful tool for non‐destructive, label‐free analysis across several scientific disciplines, ranging from materials science to biomedical research. By capturing the spatial‐dependent information in a broad range of frequencies, this technique enables the identification of chemical composition ...
Lili Shi, Leonardo Viti, Miriam S. Vitiello   +2 more
wiley   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, Volume 38, Issue 55, 1 October 2026.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, Volume 38, Issue 55, 1 October 2026.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Sensitive Aptameric Sensing Platform Utilizing Reduced Graphene Oxide Field‐Effect Transistor

Chemistry–Methods, Volume 6, Issue 10, October 2026.
The paper reports the development of a scalable, high‐performance reduced graphene oxide (RGO‐FET) biosensor engineered for ultra‐sensitive serotonin detection. Key breakthroughs are femtomolar sensitivity, low cost relative to achievable sensitivity and stability against fouling.
Co Dang Pham, Sina Jamali, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +3 more
wiley   +1 more source

Painless Biosensing for Non‐Invasive Health Monitoring: Advances, Platforms and Future Directions

Electrochemical Science Advances, Volume 6, Issue 5, October 2026.
ABSTRACT Non‐invasive biosensing has expanded blood‐based diagnostics into a growing set of accessible peripheral biofluids, yet most existing reviews remain confined to sweat, tears, saliva and urine, and treat the underlying literature descriptively rather than critically.
Ayub Alam, Faiqa Gull, Muzammal Hameed, Iqra Iqbal, Saira Naz, Hadia Noor, Ammara Aslam, Sana Younis, Valentina Vit, Muhammad Aqib Mehmood, Nicola Coppedé   +10 more
wiley   +1 more source

Amplificador operacional de transcondutância para filtros contínuos totalmente integráveis de alto Q [PDF]

, 1994
Vincence, Volney Coelho
core