Results 91 to 100 of about 3,793 (226)

Polymer Sequence Design of Zwitterionic Polymer/PEDOT:PSS Blend Films for Improved Charge Transport and Stability in Organic Electrochemical Transistors

Advanced Electronic Materials, EarlyView.
Solution blending of zwitterionic polymers with PEDOT:PSS provides a simple route to OECT materials with enhanced threshold voltage stability in biologically relevant environments. The polymer sequence alters outer‐domain structure within the preserved PEDOT:PSS framework, thereby tuning charge transport.
Wakana Takahashi, Aki Kashiwazaki, Masaya Mitsuishi, Shunsuke Yamamoto   +3 more
wiley   +1 more source

The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors

Advanced Electronic Materials
The high transconductance gm of organic electrochemical transistors (OECTs) has received widespread attention and made OECTs a valid candidate for wearable sensor systems.
Michael Skowrons, Andreas Schander, Alvaro Galeana Perez Negron, Björn Lüssem   +3 more
doaj   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Heliyon
Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction ...
Bhaskar Awadhiya, Rahul Ratnakumar, Sampath Kumar, Sameer Yadav, Kaushal Nigam, Yashwanth Nanjappa, P.N. Kondekar   +6 more
doaj   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, EarlyView.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

Design and temperature assessment of analog/RF and linearity parameters on dual material gate junctionless FinFET at 7 nm technology node for nano scale applications

Scientific Reports
The dual-material gate junctionless FinFET (DMG JLFinFET) has emerged as a promising device in semiconductor technology due to its enhanced capability to suppress short-channel effects (SCEs).
Rambabu Kusuma
doaj   +1 more source

Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors

Gels
Gel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems.
Mancheng Li, Xiaoci Liang, Chuan Liu, Songjia Han   +3 more
doaj   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

Advanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa, Taiga Kijima, Yuho Yamamoto, Yoichi Yamada, Yutaka Wakayama   +4 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source