Results 51 to 60 of about 3,763 (221)

Neuromorphic Devices and Computing for Sensing, Memory, and Control

Advanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu, Nicholas Schaffer, Xiao Yang   +2 more
wiley   +1 more source

From Sourcing to End‐of‐Life: Sustainability Challenges and Opportunities in Organic Bioelectronics

Advanced Science, EarlyView.
Organic bioelectronics bridges biology and electronics using organic mixed ionic/electronic conductors. This Perspective addresses sustainability across the full lifecycle of organic bioelectronic materials and devices, offering a framework to guide material sourcing, synthesis, fabrication, application, and end‐of‐life strategies toward bioelectronic ...
Gwennaël Dufil, Marine Batista, Andrea Bionda, Erica Zeglio   +3 more
wiley   +1 more source

MOF-MoS2 nanosheets doped PEDOT:PSS for organic electrochemical transistors in enhanced glucose sensing and machine learning-based concentration prediction

Materials Futures
Organic electrochemical transistors (OECTs) are regarded as a promising platform for chemical and biological sensing due to their biocompatibility, cost-effectiveness and flexibility. However, maintaining long-term stability of OECTs while achieving high
Yali Sun, Yun Li, Yang Zhou, Ting Cai, Yuxuan Chen, Chao Zou, Han Song, Shenghuang Lin, Shenghua Liu   +8 more
doaj   +1 more source

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain‐Inspired Computing

Advanced Science, EarlyView.
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Puranjay Saha, Saptarshi Bej, Bikas C. Das   +2 more
wiley   +1 more source

Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2012
The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi, Hamid Reza Taghva, Homayoun Mahdavi-Nasab   +2 more
doaj  

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source