Results 91 to 100 of about 12,788 (255)

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Gate Metal‐Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems

Advanced Science, EarlyView.
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Jiyong Yoon, Jaepyo Jang, Hyunjin Jung, Duhwan Seong, Daeun Kim, Yewon Jeon, Ja Hoon Koo, Sang Min Won, Donghee Son   +8 more
wiley   +1 more source

Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2012
The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi, Hamid Reza Taghva, Homayoun Mahdavi-Nasab   +2 more
doaj  

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies

Advanced Science, EarlyView.
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Hyunjin Lee, Jihyang Park, Xinyi Wang, Yueqi Deng, Jiashu Ren, Tao Zhou   +5 more
wiley   +1 more source

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

, 2001
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X, Zeng YP, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +6 more
core  

Solvent‐Desorption‐Induced Formation of a Long‐Period Polymorph Yielding a High‐Performance Porphyrin‐Based Organic Semiconductor

Advanced Science, EarlyView.
Solvent‐desorption‐induced structural transformation of 5,15‐bisphenyl‐tetrabenzoporphyrin generates a long‐period polymorph, in which the π‐stacking direction rotates by 90° between adjacent layers within the crystal while largely retaining crystallographic integrity.
Kazuya Miyazaki, Keitaro Yamamoto, Mitsuaki Yamauchi, Yoshiyuki Mizuhata, Hiroshi Matsuda, Nobutaka Shioya, Takeshi Hasegawa, Hiroko Yamada   +7 more
wiley   +1 more source

Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements

, 2013
We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution ...
Lind, Erik,, Johansson, Sofia,, Lund University.   +2 more
core   +2 more sources

Simulation study on high-linearity GaN HEMT featuring graded-composition composite channel

Dianzi Jishu Yingyong
This work proposes and simulates a high-linearity GaN HEMT device using Technology Computer Aided Design (TCAD). The device features a composite channel based on graded-composite AlGaN and InGaN layers.
Li Shiquan, Cai Likang, Lin Gang, Zhang Junyun   +3 more
doaj   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

Effects of parasitic elements in operational transconductance amplifier AM modulator

, 1997
On the basis of spectral domain analysis a general method is described for the calculation of the noise effects of the parasitic elements in operational transconductance amplifier amplitude modulator.
Nacaroglu, A, Tohumoglu, GÜLAY
core   +1 more source