Results 161 to 170 of about 12,767 (271)

Low Power Ultra‐Wideband Low‐Noise Amplifier for UWB Receiver

open access: yesEngineering Reports, Volume 8, Issue 9, September 2026.
This paper presents a 4–13 GHz UWB LNA designed in a 65 nm CMOS process, adopting gate inductor‐assisted impedance matching and current reuse feed‐forward noise cancellation. The LNA achieves 16.9 dB gain, 4.3 dB minimum NF, and only 9.4 mW power consumption from a 1 V supply.
Haimei Liu, Xiangqian Liu, Bilu Gao
wiley   +1 more source

Carrier Mobility Enhancement in Two‐Dimensional Semiconductor

open access: yesInterdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.
In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo   +6 more
wiley   +1 more source

Organic electrochemical transistor‐based tactile perception: From sensing to neuromorphic processing

open access: yesInfoMat, Volume 8, Issue 9, September 2026.
Organic electrochemical transistors (OECTs) offer a unique platform for tactile perception electronics by coupling ionic and electronic transport. This review highlights recent advances in OECT‐based temperature and pressure sensing, emphasizing material design, device architectures, operating mechanisms, and fabrication strategies toward flexible ...
Xuefeng Zhang   +10 more
wiley   +1 more source

Advanced Electrospun Nanofiber Epidermal Electronics for Electrophysiological Monitoring: From Conformal Interfaces to Multimodal Closed‐Loop Systems

open access: yesRare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Epidermal bioelectronics is a transformative technology for continuous health monitoring and human‐computer interaction. However, the mechanical and physiological mismatch at the skin–device interface limits its long‐term application. Electrospun nanofiber membranes (ENMs), with their unique three‐dimensional hierarchical porous network and ...
Jiahua Ni   +7 more
wiley   +1 more source

Dual Modulation of Schottky Barrier Height and Width Enables High‐Performance p‐Type MoTe2 Transistors

open access: yesRare Metals, Volume 45, Issue 9, September 2026.
ABSTRACT Efficient hole injection at metal‐semiconductor interfaces remains a central challenge for high‐performance p‐type transistors based on two‐dimensional (2D) semiconductors. Although substantial efforts have been devoted to reducing Schottky barrier height through contact engineering, the barrier width is rarely addressed, thereby limiting ...
Zhe Zhang   +7 more
wiley   +1 more source

<i>V</i><sub>TH</sub>-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. [PDF]

open access: yesMicromachines (Basel)
Liu Y   +10 more
europepmc   +1 more source

Nanoelectronic Detection of Opioids: Machine Learning‐Powered Screening With Carbon Nanotube Field‐Effect Transistor Sensor Array

open access: yesSmall, Volume 22, Issue 49, 1 September 2026.
A carbon nanotube field‐effect transistor (NTFET) sensor array is constructed to screen different opioids with machine learning models. Codeine, fentanyl, hydrocodone, and morphine are tested using the NTFET sensor array and classified with both conventional supervised learning models and deep learning models.
Zhengru Liu   +7 more
wiley   +1 more source

Home - About - Disclaimer - Privacy