Results 81 to 90 of about 3,734 (208)
[Purposes] Previously, pH sensors have been fabricated based on pH-sensitive poly (3,4-ethylenedioxythiophene)/bromothymol blue film and the semiconducting layer of poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate and a theoretical model has been ...
WANG Zhenxing +7 more
doaj +1 more source
Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier
New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors.
Muhammad Taher Abuelma'atti +1 more
doaj +1 more source
Subthreshold Time‐Mode All‐Digital DLL With Built‐In Linearization
This paper presents a subthreshold time‐mode all‐digital delay‐locked loop (DLL) for low‐frequency clock generation. The large and tunable delay of the DLL is obtained using a static inverter delay line whose supply voltage is in the vicinity of 100 mV and adjustable by varying supply voltage. Phase error is processed by a time‐mode proportional block (
Fei Yuan, Wenhao Wu, Yushi Zhou
wiley +1 more source
A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures
In this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures.
Wajid Manzoor +2 more
doaj +1 more source
An Ultra‐Low‐Power Biopotential Acquisition Analog Front‐End Chip for Wearable Devices
A 0.8‐V, 1.2‐μW biopotential AFE combines a chopper‐stabilized CCIA with dual‐time‐scale EDO management. The slow DSL preserves > 1 GΩ input impedance, whereas an event‐triggered fast‐recovery path shortens return to the linear range after abrupt electrode‐offset disturbances. ABSTRACT A 0.8‐V, 1.2‐μW biopotential analog front‐end (AFE) IC is presented
Zhang Xin +4 more
wiley +1 more source
Prediction of GaAs metal–semiconductor field-effect transistor parameter spread
It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a ...
N. B. Gorev +2 more
doaj
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K.
Rhaycen R. Prates +5 more
doaj +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
Material design strategies for flexible n‐type polymer semiconductors
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang +4 more
wiley +1 more source
The Trade‐Off between Transconductance and Speed for Vertical Organic Electrochemical Transistors
The high transconductance gm of organic electrochemical transistors (OECTs) has received widespread attention and made OECTs a valid candidate for wearable sensor systems.
Michael Skowrons +3 more
doaj +1 more source

