Results 81 to 90 of about 3,793 (226)

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

open access: yesAdvanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler   +4 more
wiley   +1 more source

Theoretical Model of I-V Characteristics of pH-Sensitive Organic Electrochemical Transistors Based on Sigmoid Function

open access: yesTaiyuan Ligong Daxue xuebao
[Purposes] Previously, pH sensors have been fabricated based on pH-sensitive poly (3,4-ethylenedioxythiophene)/bromothymol blue film and the semiconducting layer of poly (3,4-ethylenedioxythiophene)/polystyrene sulfonate and a theoretical model has been ...
WANG Zhenxing   +7 more
doaj   +1 more source

A Tunable Quadrature Oscillator with Only Transconductance Elements and Grounded Capacitors

open access: yesActive and Passive Electronic Components, 2002
A novel quadrature oscillator is realised with only transconductance elements (TEs) and grounded capacitors. The realised quadrature oscillator uses only two inverting and two non-inverting transconductance elements, along with two grounded capacitors ...
Iqbal A. Khan   +2 more
doaj   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Prediction of GaAs metal–semiconductor field-effect transistor parameter spread

open access: yesТехнологія та конструювання в електронній апаратурі, 2006
It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a ...
N. B. Gorev   +2 more
doaj  

Grounded Capacitor Oscillators Using A Single Operational Transconductance Amplifier

open access: yesActive and Passive Electronic Components, 1996
New oscillator circuits using operational transconductance amplifiers (OTAs) are presented. Each circuit uses a single OTA and grounded capacitors.
Muhammad Taher Abuelma'atti   +1 more
doaj   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

open access: yesAdvanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures

open access: yesIEEE Journal of the Electron Devices Society
In this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures.
Wajid Manzoor   +2 more
doaj   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

open access: yesIEEE Journal of the Electron Devices Society
This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580 K.
Rhaycen R. Prates   +5 more
doaj   +1 more source

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