Results 141 to 150 of about 25,830 (234)
Small, EarlyView.High‐temperature reconstruction of c‐plane sapphire during MOCVD growth of MoS2 fundamentally alters the optical and electronic properties of MoS2 epilayer by introducing step‐edge driven interfacial charge transfer. Raman, PL, and KPFM reveal non‐uniform doping and strain in as‐grown films, whereas transferred layers show uniform optical and ...
Riccardo Torsi +8 more
wiley +1 more source
Large Unsaturated Magnetoresistance in Gated MoS2 Flakes
Small, EarlyView.Magnetotransport investigation of layered MoS2 crystals in field‐effect devices reveals strong dependence on thickness and carrier density. Monolayer MoS2 exhibits the highest magnetoresistance of 680%. A combination of density functional theory and Boltzmann transport equation simulations shows that band transport is not causing the magnetic behavior,
Anoir Hamdi +8 more
wiley +1 more source
Organic Transistor‐Based Neuromorphic Electronics and Their Recent Applications
Small Methods, EarlyView.This review highlights recent progress in organic neuromorphic electronics, showing how organic semiconductors enable synaptic and neuronal functions with low power, mechanical flexibility, and biocompatibility. By bridging materials, devices, and systems, organic platforms are accelerating brain‐inspired computing toward applications in artificial ...
Ziru Wang, Feng Yan
wiley +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi +7 more
wiley +1 more source
EcoMat, Volume 8, Issue 4, April 2026.This work presents an electrochemical phosphate detection platform by integrating europium receptors into amperometric and organic electrochemical transistor sensors. These configurations enabled real‐time, selective, reversible phosphate sensing in artificial interstitial fluid and Mississippi Sound water samples, demonstrating their potential for ...
Xiyu Sun +9 more
wiley +1 more source
Rare Metals, Volume 45, Issue 4, April 2026.ABSTRACT Engineering the semiconductor/dielectric interface is crucial for advancing two‐dimensional (2D) nanoelectronics, where device performance is predominantly governed by interfacial defects and dielectric coupling. Optoelectronic doping based on carrier trapping at the h‐BN/SiO2 interface has enabled non‐volatile and reversible carrier ...
Zhe Zhang +6 more
wiley +1 more source
Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications. [PDF]
Sci RepAhmad MA +3 more
europepmc +1 more source