Results 151 to 160 of about 12,767 (271)

Performance analysis of electrostatic and transport characteristics of underlap-engineered gate-all-around carbon nanotube (CNT) FETs for nanoelectronics circuitry applications. [PDF]

Sci Rep
Bose SJ, Dhar RS, Hussein MI, Awwad F.
europepmc   +1 more source

From Sourcing to End‐of‐Life: Sustainability Challenges and Opportunities in Organic Bioelectronics

Advanced Science, Volume 13, Issue 51, 14 September 2026.
Organic bioelectronics bridges biology and electronics using organic mixed ionic/electronic conductors. This Perspective addresses sustainability across the full lifecycle of organic bioelectronic materials and devices, offering a framework to guide material sourcing, synthesis, fabrication, application, and end‐of‐life strategies toward bioelectronic ...
Gwennaël Dufil, Marine Batista, Andrea Bionda, Erica Zeglio   +3 more
wiley   +1 more source

Nano-Power OTA-Based Low-Pass Filter for Ultra-Low-Energy Biomedical Signal Processing. [PDF]

Sensors (Basel)
Kulej T, Kumngern M, Khateb F.
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi, Kiyung Kim, Hyeon‐Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jae Hyeon Jun, Joon Kim, Yoonyoung Chung, Byoung Hun Lee   +8 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Channel-engineered GAA FETs: From device to circuit perspective for Angstrom technology nodes. [PDF]

Sci Rep
Bharath Sreenivasulu V, Thoti N.
europepmc   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

Design of a high-efficiency gilbert mixer with current source assistance and current bleeding for HEV and wireless sensor network applications. [PDF]

Sci Rep
Rout SS, Mishra A, Panigrahy AK, Sreenivasulu VB.   +3 more
europepmc   +1 more source