Results 21 to 30 of about 12,767 (271)
A model of partially-depleted SOI MOSFETs in the subthreshold range
Journal of Telecommunications and Information Technology, 2001 A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in cur- rent continuity equation, which is a key equation of the PD SOI MOSFETs model are ...
Andrzej Jakubowski
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Advances on CMOS Folded-Cascode Operational Transconductance [PDF]
AUT Journal of Electrical Engineering, 2022 In this paper, a tutorial review on several structural improvements of the CMOS folded-cascode Operational Transconductance Amplifier (OTA) is presented. After a brief discussion on the structure and operation of the conventional Folded-Cascode Amplifier,
Mohammad Yavari
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Low-voltage organic transistors with high transconductance [PDF]
, 2020 This thesis presents the development of low-voltage organic thin-film transistors with high transconductance. This was achieved by employing ultra-thin bi-layer gate dielectric consisting of aluminium oxide (AlOx) and a self-assembled monolayer of ...
Al Ruzaiqi, Afra Salim Mohamed
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]
E3S Web of ConferencesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae +2 more
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New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
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DESIGN OF THE TRANSCONDUCTANCE AMPLIFIER FOR FREQUENCY DOMAIN SAMPLING RECEIVER [PDF]
, 2010 In this work, the circuit implementation of the front-end for Frequency Domain (FD) Sampling Receiver is presented. Shooting for two different applications, two transconductance amplifiers are designed.
Chen, XI
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Engineering and Applied Science Research, 2020 To improve the transconductance of operational transconductance amplifier (OTA), various architectures namely recycling folded cascode (RFC), Improved recycling folded cascode (IRFC), modified recycling folded cascode (MRFC) and high recycling folded ...
Sudheer Raja Venishetty +1 more
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Modelling of High Frequency Converter Transformer with Floating Active Inductor
Elektronika ir Elektrotechnika, 2018 As number of digital electronics and power electronics based devices has risen recently, the fields of application for high frequency transformers have been increased.
Mustafa Konal +3 more
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Biquadratic transconductance switched-capacitor filters [PDF]
, 1993 Switched-capacitor (SC) filters yield efficient implementations in integrated form. However, they employ op-amps, each of which must be designed for a given filter separately. Furthermore, SC filters are not tunable.
Tan, M. A.
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