Results 71 to 80 of about 3,734 (208)

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Simulation study on high-linearity GaN HEMT featuring graded-composition composite channel

Dianzi Jishu Yingyong
This work proposes and simulates a high-linearity GaN HEMT device using Technology Computer Aided Design (TCAD). The device features a composite channel based on graded-composite AlGaN and InGaN layers.
Li Shiquan, Cai Likang, Lin Gang, Zhang Junyun   +3 more
doaj   +1 more source

Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1

Advanced Electronic Materials, EarlyView.
The controlled growth of germanium hut wires on patterned SiGe/Si(001) substrates is reported. These self‐assembled nanowires achieve a record hole mobility of 22 900 cm2 V−1 s−1 at 4.2 K. Remarkably, conductance quantization is observed at a channel length of 1.9 µm, highlighting their exceptionally low disorder and paving the way for scalable, high ...
Ming Ming, Jian‐Huan Wang, Jie‐Yin Zhang, Ding‐Ming Huang, Dan Han, Ting Wang, Jing Teng, Jian‐Jun Zhang   +7 more
wiley   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Digitally Programmable Integrator and Differentiator

Active and Passive Electronic Components, 1995
Digitally programmable integrator and differentiator circuits are presented. Each circuit uses at most one operational amplifier, two operational transconductance amplifiers, and one capacitor.
Abdulrahman Khalaf Al-Ali, Muhammad Taher Abuelma'atti, Syed Yunus   +2 more
doaj   +1 more source

On the Design of a Class of Analog Filters Whose Impulse Response Is a Mittag‐Leffler Function

International Journal of Circuit Theory and Applications, EarlyView.
Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known forms are summarized in this work. Simulation results using Cadence and experimental results using an FPAA validate the introduced concept. ABSTRACT Fractional‐order filters whose impulse response is a Mittag‐Leffler (M‐L) function in any of its known
Julia Nako, Costas Psychalinos, Ahmed S. Elwakil, Brent J. Maundy   +3 more
wiley   +1 more source

A Tunable Quadrature Oscillator with Only Transconductance Elements and Grounded Capacitors

Active and Passive Electronic Components, 2002
A novel quadrature oscillator is realised with only transconductance elements (TEs) and grounded capacitors. The realised quadrature oscillator uses only two inverting and two non-inverting transconductance elements, along with two grounded capacitors ...
Iqbal A. Khan, Muslim T. Ahmed, Nigar Minhaj   +2 more
doaj   +1 more source

A Co‐Designed Implicit‐Reset Path PFD and Current Mismatch Compensated CP Enabling Sub‐0.5% Mismatch and Dead Zone‐Free for Low‐Spur PLLs

International Journal of Circuit Theory and Applications, EarlyView.
A co‐designed implicit‐reset phase‐frequency detector (PFD) and nonlinear amplifier‐assisted charge pump (CP) achieve dead zone‐free operation from 10 MHz to 4.7 GHz with < 0.5% current mismatch without calibration, enabling −80 dBc of reference spur and 0.50 ps of RMS jitter in a 180 nm of CMOS PLL.
A. Ghaemnia, Jincheng Yang, Xiaojiong Fei, G. Zhang   +3 more
wiley   +1 more source