Results 171 to 180 of about 28,299 (286)
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.By directly comparing PEALD (P‐IGZO) and thermal‐ALD (T‐IGZO), we show that oxidant reactivity governs atomically ordered InOx–(Ga, Zn)O nanolaminates and a robust 2DEG in amorphous IGZO. PEALD with oxygen plasma forms sharper, chemically distinct interfaces and higher InOx connectivity, achieving ∼90 cm2 V−1 s−1 mobility and superior BTI stability ...
Yoon‐Seo Kim +7 more
wiley +1 more source
Biasing technique to improve total harmonic distortion in an ultra‐low‐power operational transconductance amplifier [PDF]
, 2019 Arnaldo del Risco Sánchez +3 more
openalex +1 more source
Current and transconductance mode full/half‐wave rectifiers realized with only one active block [PDF]
, 2023 Predrag B. Petrović
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Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee +7 more
wiley +1 more source
1-V Mixed-Mode Universal Filter Using Differential Difference Current Conveyor Transconductance Amplifiers [PDF]
Montree Kumngern +2 more
openalex +1 more source
Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
ACS OmegaQureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc +1 more source
Large negative differential transconductance in multilayer graphene: the role of intersubband scattering [PDF]
, 2017 Seungchan Woo, E H Hwang, Hongki Min
openalex +1 more source