Results 191 to 200 of about 25,830 (234)

A Universal Implementation Approach for Multivalued Logic Gates Based on Negative Transconductance in Series-Connected Two-Dimensional Transistors. [PDF]

ACS Nano
Zhao G, Wen W, Liao K, Coquet P, Wang X, Huang M, Tay BK.   +6 more
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Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

3-Levels Vertically Stacked Si Nanosheet GAA pFETs with Low-Temperature Interface Treatment for Cryogenic Application. [PDF]

Nanomaterials (Basel)
Qian L, Liu T, Liao M, Guo X, Xu S, Xu M, Zhang DW.   +6 more
europepmc   +1 more source

Organic Electrochemical Transistors Monolithically Integrated with Precise Micro-Dispensing Enable High-Performance Biosignals Amplification. [PDF]

Adv Sci (Weinh)
Granelli R, Demartis VM, Frusconi G, Kovács-Vajna ZM, Torricelli F.   +4 more
europepmc   +1 more source

A one-transistor organic electrochemical self-sustained oscillator model for neuromorphic networks.

Newton
Bisquert J, Tessler N.
europepmc   +1 more source

Algal polysaccharide Sacran-based conductive nanocomposites for ultrathin flexible and biodegradable organic electrochemical transistors. [PDF]

Npj Flex Electron
Matura K, Putz C, Hradilova S, Polakova K, Irimia-Vladu M, Okajima M, Kaneko T, Kaltenbrunner M, Sariciftci NS, Tekoglu S.   +9 more
europepmc   +1 more source

Non-invasive action potential recordings using printed electrolyte-gated polymer field-effect transistors. [PDF]

Nat Commun
Kyndiah A, Zemignani GZ, Ronchi C, Tullii G, Khudiakov A, Iachetta G, Chiodini S, Moreddu R, Viola FA, Schwartz PJ, Gomila G, De Angelis F, Sala L, Antognazza MR, Caironi M.   +14 more
europepmc   +1 more source

Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]

Micromachines (Basel)
Huang J, Liu H, Chen S, Wang S, Chong C, Liu C.   +5 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

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High Transconductance OGFETs

SPIE Proceedings, 1987
Submicron channel MESFETs with a special electrode arrangement, previously described by Colquhoun and Ebert l have been fabricated and characterized. This overlapped gate configuration allows the channel length of the device to be substantially shorter than the gate metallization length.
G. Ebert, A. Colquhoun
openaire   +1 more source