Results 121 to 130 of about 10,598 (239)

Aging and Electrical Stability of DNTT Honey‐Gated OFETs

Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves   +8 more
wiley   +1 more source

Subthreshold operation of Nauta's operational transconductance amplifier

, 2015
This paper investigates the subthreshold operation of the inverter-based operational transconductance amplifier for the potential use in very low power data conversion systems.
Torsten Lehmann, Irfansyah, Astria N., Jenkins, Julian, Andrew Nicholson, Tara Julia Hamilton, Astria Nur Irfansyah, Hamilton, Tara J. (R17271), Lehmann, Torsten, Nicholson, Andrew, Julian Jenkins   +9 more
core   +1 more source

Revealing the Impact of Gel Electrolytes on the Performance of Organic Electrochemical Transistors

Gels
Gel electrolyte-gated organic electrochemical transistors (OECTs) are promising bioelectronic devices known for their high transconductance, low operating voltage, and integration with biological systems.
Mancheng Li, Xiaoci Liang, Chuan Liu, Songjia Han   +3 more
doaj   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi, Ethan White, Qinghui Shao, Bikramjit Chatterjee, Clint D. Frye, Dylan M. Evans, Mohamadali Malakoutian, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja   +9 more
wiley   +1 more source

On the Transconductance of Polysilicon Thin Film Transistors

Журнал нано- та електронної фізики, 2011
In order to achieve both driver and display capability for a number of display devices, TFT has attracted attention, model calculations are therefore presented for the grain boundary barrier height, in a polysilicon TFT considering the charge neutrality between the intrinsic free carriers and the grain boundary trap states.
Panwar, Alka, Tyagi, B.P.
openaire   +2 more sources

High-transconductance stretchable transistors achieved by controlled gold microcrack morphology

, 2019
High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of ...
Changjin Wan, Kang, Jiheong, Insang You, Liu, Zhiyuon, Helen Tran, You, Insang, Chen, Xiaodong, Geng Chen, Liu, Zhiyuan, Wu, Hung-Chin, Chen, Geng, Naoji Matsuhisa, Kim, Yeongin, Zhiyuan Liu, Yeongin Kim, Bao, Zhenan, Zhenan Bao, Xiaodong Chen, Jiheong Kang, Jiang, Ying, Wan, Changjin, Tran, Helen, Ying Jiang, Matsuhisa, Naoji, Matsuhisa, Nooji, Hung‐Chin Wu   +25 more
core   +1 more source

A novel design of current differencing transconductance amplifier with high transconductance gain and enhanced bandwidth

TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES, 2021
Shireesh Kumar Rai, Rishikesh Pandey, Bharat Garg, Sujit Kumar Patel   +3 more
openaire   +1 more source

A Relationship between Interface Trap Density and Transconductance in 6H-SiC Enhancement Mode Field Effect Transistors

, 1995
An explicit analytical expression relating the interface trap densities and transconductance is derived for enhancement mode field effect transistors without any simplifying assumptions regarding the energy distribution of traps. Using this relationship,
M. Tabib-Azar, M. W. Dryfuse
core   +1 more source

Modified current differencing transconductance amplifier - new versatile active element

, 2012
This paper introduces a new current mode component called Modified Current Differencing Transconductance Amplifier (MCDTA). Important parameters of the circuit i.e.
Malcher, A.
core