Results 51 to 60 of about 10,598 (239)

Analog/RF Performance Investigation of Dopingless FET for Ultra-Low Power Applications

IEEE Access, 2019
In this paper, we investigated the performance of a dopingless (DL) double gate fieldeffect transistor (DL-DGFET) for ultra-low power (ULP) analog/RF applications. It is observed that the source/drain metal electrode work-function engineering in DL-DGFET
Ankit Sirohi, Chitrakant Sahu, Jawar Singh   +2 more
doaj   +1 more source

Printable Conductive Hydrogels for Electrochemical Biosensing and Soft Bioelectronic Interfaces

Advanced Science, EarlyView.
Flexible, conductive hydrogels that integrate printability, mechanical tunability, biocompatibility, and electronic performance remain challenging to achieve. Here, we develop 3D‐printable poly(ethylene glycol)–poly(pyrrole)‐ hydrogels with tissue‐like mechanics, high cytocompatibility, and robust electrochemical function.
Lukas Hein, Renan Colucci, Xin Wei, Tsvetomir Ivanov, Katharina Landfester, Ulrike Kraft, Maria Villiou   +6 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

MOF-MoS2 nanosheets doped PEDOT:PSS for organic electrochemical transistors in enhanced glucose sensing and machine learning-based concentration prediction

Materials Futures
Organic electrochemical transistors (OECTs) are regarded as a promising platform for chemical and biological sensing due to their biocompatibility, cost-effectiveness and flexibility. However, maintaining long-term stability of OECTs while achieving high
Yali Sun, Yun Li, Yang Zhou, Ting Cai, Yuxuan Chen, Chao Zou, Han Song, Shenghuang Lin, Shenghua Liu   +8 more
doaj   +1 more source

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

IEEE Journal of the Electron Devices Society, 2015
An unorthodox approach for producing simple and yet practical transistors based on ceramic platforms is discussed in this paper. To achieve this, we modify the original nonlinear current-voltage (I-V) characteristics of a varistor by superimposing a ...
Raghvendra K. Pandey, William A. Stapleton, Ivan Sutanto   +2 more
doaj   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Improved drive current in RF vertical MOSFETS using hydrogen anneal [PDF]

, 2011
This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications.
Tan, L., Redman-White, W., Ashburn, P., Hall, S., M. M. A. Hakim, Abuelgasim, A., L. Tan, W. Redman-White, de Groot, C.H., C. H. de Groot, Hakim, M.M.A., A. Abuelgasim, S. Hall, P. Ashburn   +13 more
core   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

Advanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu, Xinwen Yan, Ling Huang, Xiaohang Zhang, Xuan Cao, Cong Zhang, Qingqing Sun, Hanyu Jia, Xuying Liu   +8 more
wiley   +1 more source

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

, 1988
An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulated and analytical study. The transconductance curve study is shown to be a good tool for the correct characterization of the stress induced damage, and ...
C. BERGONZONI, P. CAPRARA, R. BENECCHI
core   +1 more source