New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
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Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier
U.Porto Journal of Engineering, 2021 In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input.
Rajesh Durgam, S. Tamil, Nikhil Raj
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Micromachines, 2023 In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated.
Meng Zhang +10 more
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Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis
IEEE Journal of the Electron Devices Society, 2019 This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the ...
Mandar S. Bhoir +6 more
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HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE [PDF]
, 1988 An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulated and analytical study. The transconductance curve study is shown to be a good tool for the correct characterization of the stress induced damage, and ...
C. BERGONZONI, P. CAPRARA, R. BENECCHI
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Tuning Positive and Negative Transconductance in Multilayer MoS2 with Indium Contacts [PDF]
, 2022 © 2022 American Physical Society. We report unusual behavior in the transconductance of multilayer MoS2 at a low temperature. Multilayer MoS2 with indium top contacts exhibits negative transconductance at an intermediate back-gate bias and reentrant ...
Ji, Hyunjin +6 more
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Modelling Of Gaas Mesfet Output Conductance And Transconductance Frequency Dispersion [PDF]
, 1993 The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for.
Yuan, Jiann S.
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Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]
Serbian Journal of Electrical EngineeringThis study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah +4 more
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Submicron Vertical Channel Organic Electrochemical Transistors with Ultrahigh Transconductance [PDF]
, 2023 Organic electrochemical transistors (OECTs) belong to the class of electrolyte gated organic transistors (EGOTs) that offer a smooth interface with biology in combination with high transconductance values of typically a few mS.
Fabrizio Torricelli +8 more
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Effects of parasitic elements in operational transconductance amplifier AM modulator [PDF]
, 1997 On the basis of spectral domain analysis a general method is described for the calculation of the noise effects of the parasitic elements in operational transconductance amplifier amplitude modulator.
Nacaroglu, A, Tohumoglu, GÜLAY
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