Results 41 to 50 of about 3,734 (208)

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Co-optimized e-mode AlGaN/GaN HEMT with composite p-GaN recessed cap and etched doped buffer for simultaneous DC and RF performance enhancement [PDF]

Serbian Journal of Electrical Engineering
This study presents a theoretical analysis of the DC and RF characteristics of enhancement mode (E-mode) AlGaN/GaN High Electron Mobility Transistor (HEMT) utilizing symbiotic integration of advanced techniques e.g. composite gate structure with slightly
Al Fahad Abdullah, Jawad Md. Nafis, Talukder Arnab, Rahman Ifty Mohaiminur, Kabir Md. Maharaj   +4 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Charge‐Encoded Sidechains Enable Deterministic Ion Ingress and Memory Retention in Organic Electrochemical Synaptic Transistors

Advanced Materials, EarlyView.
Organic electrochemical synaptic transistors based on sidechain‐engineered conjugated polyelectrolytes reveal that cationic sidechains enable efficient volumetric ion penetration and dense backbone doping, leading to enhanced transconductance and long‐term synaptic retention.
Haim Kwon, Jihyeon You, Chaeyeon Park, Dong Gue Roe, Ji Hyun Jung, Jeong Ho Cho, Han Young Woo   +6 more
wiley   +1 more source

The Impact of Non‐Monolithic Semiconductor Capacitance on Organic Electrochemical Transistors Performance and Design

Advanced Electronic Materials
The existing device models for organic electrochemical transistors (OECTs) fail to provide any device design guidelines for optimized performance parameters such as transconductance that are pivotal for the applications OECTs in sensing.
Ned E. Dreamer, Dimitrios A. Koutsouras, Morteza Hassanpour Amiri, Paschalis Gkoupidenis, Kamal Asadi   +4 more
doaj   +1 more source

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

Micromachines
Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved.
François Grandpierron, Elodie Carneiro, Lyes Ben-Hammou, Jeong-Sun Moon, Farid Medjdoub   +4 more
doaj   +1 more source