Results 191 to 200 of about 335,727 (374)

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

Advanced Materials Interfaces, EarlyView.
Controlled doping of magnesium oxide into indium/tin oxide binary thin‐films allows to manage their thin‐film transistor (TFT) parameters. Variation of mobility (µsat), threshold‐voltage (Vth), and on/off ratio (IOn/IOff) allows insight into the variation of the electron conduction mechanism in these semiconductor films.
M. Isabelle Büschges, Vanessa Trouillet, Ann‐Christin Dippel, Jörg J. Schneider   +3 more
wiley   +1 more source

Methods for Measuring and Characterizing Transistor and Diode Large Signal Parameters for Use in Automatic Circuit Analysis Programs [PDF]

, 1965
W.H. Sullivan, Jochen Wirth
openalex   +2 more sources

Mechanical Deformation Effects on Flexible Thin Film Transistors: A Comparison Between 6,13‐Bis(Triisopropylsilylethynyl)Pentacene and N,N′‐Bis‐(2‐Ethylhexyl)‐1,7‐Dicyanoperylene‐3,4:9,10‐bis(Dicarboximide) Derivatives

Advanced Materials Interfaces, EarlyView.
This work examines the impact of surface strain on the electrical properties of two widely employed organic semiconductors, TIPS‐Pentacene and N1400. Electromechanical tests on flexible transistors reveal that while both materials are affected by mechanical deformation, N1400 demonstrates superior stability.
A. Mascia, M. Concas, E. Podda, G. Casula, S. Lai, P. Cosseddu   +5 more
wiley   +1 more source

Evaporated silicon thin-film transistors [PDF]

, 1965
C.A.T. Salama, L. Young
openalex   +1 more source

Transparent Temperature Sensors for Photothermal Neuromodulation: Advances, Challenges, and Future Directions

Advanced Materials Interfaces, EarlyView.
Photothermal neuromodulation is a promising technique for versatile neural signal study and treatment development. To further develop these technologies and optimize their effectiveness, transparent electrical temperature sensors with high thermal sensitivity and resolution are essential for accurately monitoring temperature changes during ...
Jee Woong Lee, Junhee Lee, Jungha Lee, Duhee Kim, Woongki Hong, Junghyup Lee, Minyoung Song, Hongki Kang   +7 more
wiley   +1 more source

A HIGH IMPEDANCE INPUT CIRCUIT USING GERMANIUM TRANSISTORS

, 1958
J. J. Baum
openalex   +2 more sources

“Second breakdown” in transistors [PDF]

, 1963
John T. Yates
openalex   +1 more source

High‐Resolution and Surface‐Sensitive Tip‐Enhanced Raman Spectroscopy Characterization of Strained‐Silicon Devices through Cleanroom‐Compatible Plasmonic Probes

Advanced Materials Interfaces, EarlyView.
This paper demonstrates how Tip‐Enhanced Raman Spectroscopy (TERS) can detect diverse levels of strain in a SiGe‐Si structure in less than 20 nm of depth with lateral resolution under 100 nm. The measures are performed with a TiN‐coated probe, which secures a remarkable enhancement of the optical signal, while being chemically stable to allow TERS to ...
Chiara Mancini, Anacleto Proietti, Giancarlo La Penna, Luca Buccini, Daniele Passeri, Narciso Gambacorti, Marco Rossi   +6 more
wiley   +1 more source

Synaptic and neural behaviours in a standard silicon transistor. [PDF]

Nature
Pazos S, Zhu K, Villena MA, Alharbi O, Zheng W, Shen Y, Yuan Y, Ping Y, Lanza M.   +8 more
europepmc   +1 more source

ON CURRENT AMPLIFICATION IN POINT CONTACT TRANSISTORS

, 1958
CHUO CHI-TSANG, SHIUH GEN-TWEN
openalex   +1 more source